New frequency dependent target impedance for DDR3 memory system

Hayato Sasaki, Masato Kanazawa, Toshio Sudo, Atsushi Tomishima, Toshiyuki Kaneko

研究成果: Conference contribution

7 被引用数 (Scopus)

抄録

Anti-resonance peak in power distribution network (PDN) impedance must be avoided to prevent the interference between signal integrity and power integrity of a system. Conventional criteria of PDN impedance is a target impedance with a constant value over wide frequency range. However, the constant target impedance is not suitable for the high-speed systems, such as DDR-3 memory systems, because it is not cost effective to maintain PDN impedance as low as possible, especially in high frequency range. Furthermore, clock frequencies of modern LSIs already exceed the peak frequency of PDN impedance. In this paper, frequency spectrum of the power supply switching current of the ASIC driver has been used to define the target impedance in the DDR3 memory system. Frequency dependent target impedance has been obtained from the switching current spectrum. Degradation of signal integrity, such as eye height and jitter due to anti-resonance peaks have been checked by comparing the frequency dependent target impedance of DDR3 system.

本文言語English
ホスト出版物のタイトル2011 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2011
DOI
出版ステータスPublished - 2011 12月 1
イベント2011 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2011 - Hanzhou, China
継続期間: 2011 12月 122011 12月 14

出版物シリーズ

名前2011 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2011

Conference

Conference2011 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2011
国/地域China
CityHanzhou
Period11/12/1211/12/14

ASJC Scopus subject areas

  • 電子工学および電気工学

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