New Ion-Implantation Method for 4-μm Period Bubble Device

Fumiaki Hyuga, Masanori Shinohara, Atsuo Kozen, Makoto Hirano, Nobuyori Tsuzuki

    研究成果: Letter

    抜粋

    It is well-known that bubble propagation margins for ion-implanted bubble devices depend strongly on ion-implantation conditions. A new ion-implantation method is reported that can significantly improve bubble propagation margins for minor loops with 4X4 {\um}m bit cell size. The implantation was done through a Mo thin film layer so that the lattice strain and the anisotropy field change would be more uniform through the depth of the implanted layer. With this method, minor loops can be formed by hydrogen single implantation. Consequently simplification of the implantation process is achieved.

    元の言語English
    ページ(範囲)545-546
    ページ数2
    ジャーナルIEEE Transactions on Magnetics
    20
    発行部数4
    DOI
    出版物ステータスPublished - 1984 7

      フィンガープリント

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

    これを引用

    Hyuga, F., Shinohara, M., Kozen, A., Hirano, M., & Tsuzuki, N. (1984). New Ion-Implantation Method for 4-μm Period Bubble Device. IEEE Transactions on Magnetics, 20(4), 545-546. https://doi.org/10.1109/TMAG.1984.1063123