New Ion-Implantation Method for 4-μm Period Bubble Device

Fumiaki Hyuga; Masanori Shinohara; Atsuo Kozen; Makoto Hirano; Nobuyori Tsuzuki

doi:10.1109/TMAG.1984.1063123

New Ion-Implantation Method for 4-μm Period Bubble Device

Fumiaki Hyuga, Masanori Shinohara, Atsuo Kozen, Makoto Hirano, Nobuyori Tsuzuki

研究成果: Letter

抜粋

It is well-known that bubble propagation margins for ion-implanted bubble devices depend strongly on ion-implantation conditions. A new ion-implantation method is reported that can significantly improve bubble propagation margins for minor loops with 4X4 {\um}m bit cell size. The implantation was done through a Mo thin film layer so that the lattice strain and the anisotropy field change would be more uniform through the depth of the implanted layer. With this method, minor loops can be formed by hydrogen single implantation. Consequently simplification of the implantation process is achieved.

元の言語	English
ページ（範囲）	545-546
ページ数	2
ジャーナル	IEEE Transactions on Magnetics
巻	20
発行部数	4
DOI	https://doi.org/10.1109/TMAG.1984.1063123
出版物ステータス	Published - 1984 7

フィンガープリント

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

これを引用

Hyuga, F., Shinohara, M., Kozen, A., Hirano, M., & Tsuzuki, N. (1984). New Ion-Implantation Method for 4-μm Period Bubble Device. IEEE Transactions on Magnetics, 20(4), 545-546. https://doi.org/10.1109/TMAG.1984.1063123

@article{fb5ee79cc0c146eca6e3a3df7c368a91,

title = "New Ion-Implantation Method for 4-μm Period Bubble Device",

abstract = "It is well-known that bubble propagation margins for ion-implanted bubble devices depend strongly on ion-implantation conditions. A new ion-implantation method is reported that can significantly improve bubble propagation margins for minor loops with 4X4 {\um}m bit cell size. The implantation was done through a Mo thin film layer so that the lattice strain and the anisotropy field change would be more uniform through the depth of the implanted layer. With this method, minor loops can be formed by hydrogen single implantation. Consequently simplification of the implantation process is achieved.",

author = "Fumiaki Hyuga and Masanori Shinohara and Atsuo Kozen and Makoto Hirano and Nobuyori Tsuzuki",

year = "1984",

month = jul

doi = "10.1109/TMAG.1984.1063123",

language = "English",

volume = "20",

pages = "545--546",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - New Ion-Implantation Method for 4-μm Period Bubble Device

AU - Hyuga, Fumiaki

AU - Shinohara, Masanori

AU - Kozen, Atsuo

AU - Hirano, Makoto

AU - Tsuzuki, Nobuyori

PY - 1984/7

Y1 - 1984/7

N2 - It is well-known that bubble propagation margins for ion-implanted bubble devices depend strongly on ion-implantation conditions. A new ion-implantation method is reported that can significantly improve bubble propagation margins for minor loops with 4X4 {\um}m bit cell size. The implantation was done through a Mo thin film layer so that the lattice strain and the anisotropy field change would be more uniform through the depth of the implanted layer. With this method, minor loops can be formed by hydrogen single implantation. Consequently simplification of the implantation process is achieved.

AB - It is well-known that bubble propagation margins for ion-implanted bubble devices depend strongly on ion-implantation conditions. A new ion-implantation method is reported that can significantly improve bubble propagation margins for minor loops with 4X4 {\um}m bit cell size. The implantation was done through a Mo thin film layer so that the lattice strain and the anisotropy field change would be more uniform through the depth of the implanted layer. With this method, minor loops can be formed by hydrogen single implantation. Consequently simplification of the implantation process is achieved.

UR - http://www.scopus.com/inward/record.url?scp=0021458247&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0021458247&partnerID=8YFLogxK

U2 - 10.1109/TMAG.1984.1063123

DO - 10.1109/TMAG.1984.1063123

M3 - Letter

AN - SCOPUS:0021458247

VL - 20

SP - 545

EP - 546

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

SN - 0018-9464

IS - 4

ER -

文献にアクセス

10.1109/TMAG.1984.1063123