New method for characterizing dielectric properties of high-k films with time-dependent open-circuit potential measurement

Koji Kita, Masashi Sasagawa, Kentaro Kyuno, Akira Toriumi

研究成果: Article査読

抄録

A new method for characterizing dielectric properties of high-k films was investigated, with an open-circuit potential (OCP) measurement during the etching of a film in a solution. The linear dependence of OCP on etching time was clearly observed. The areal density of the adsorbed ion. charges on the film surface was estimated from the slope of the time dependence of OCP, and it was shown to be closely related to the electronegativity difference between the atoms on the film surface and etchant atoms in the solution. This finding implies that the time-dependent OCP measurement is useful for evaluating the ionic characteristic of dielectric materials.

本文言語English
ページ(範囲)L631-L633
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
42
6 B
DOI
出版ステータスPublished - 2003 6 15
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

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