A new p-channel two dimensional hole gas (2DHG) heterostructure FET (HFET) which operates in MIS transistor-like mode has been fabricated on an undoped AlGaAs/GaAs heterostructure grown by molecular beam epitaxy (MBE). The device operates entirely in an enhancement-mode with a threshold voltage of minus 0. 3 V at both 300 K and 77 K. Maximum values of transconductances of 17 ms/mm at 300 K and 40 mS/mm at 77 K have been achieved in a 1 mu m gate length structure. As the present p-channel device is very simple, a complementary circuit scheme using a p-channel 2DHG HFET of this type will be most promising in future.
|ホスト出版物のタイトル||Japanese Journal of Applied Physics, Part 2: Letters|
|出版ステータス||Published - 1985 5月|
ASJC Scopus subject areas