NEW p-CHANNEL AlGaAs/GaAs MIS-LIKE HETEROSTRUCTURE FET EMPLOYING TWO DIMENSIONAL HOLE GAS.

Kunishige Oe, Makoto Hirano, Kunihiro Arai, Fumihiko Yanagawa

研究成果: Chapter

16 被引用数 (Scopus)

抄録

A new p-channel two dimensional hole gas (2DHG) heterostructure FET (HFET) which operates in MIS transistor-like mode has been fabricated on an undoped AlGaAs/GaAs heterostructure grown by molecular beam epitaxy (MBE). The device operates entirely in an enhancement-mode with a threshold voltage of minus 0. 3 V at both 300 K and 77 K. Maximum values of transconductances of 17 ms/mm at 300 K and 40 mS/mm at 77 K have been achieved in a 1 mu m gate length structure. As the present p-channel device is very simple, a complementary circuit scheme using a p-channel 2DHG HFET of this type will be most promising in future.

本文言語English
ホスト出版物のタイトルJapanese Journal of Applied Physics, Part 2: Letters
ページ335-337
ページ数3
24
5
出版ステータスPublished - 1985 5
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)

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