抄録
A new p-channel two dimensional hole gas (2DHG) heterostructure FET (HFET) which operates in MIS transistor-like mode has been fabricated on an undoped AlGaAs/GaAs heterostructure grown by molecular beam epitaxy (MBE). The device operates entirely in an enhancement-mode with a threshold voltage of minus 0. 3 V at both 300 K and 77 K. Maximum values of transconductances of 17 ms/mm at 300 K and 40 mS/mm at 77 K have been achieved in a 1 mu m gate length structure. As the present p-channel device is very simple, a complementary circuit scheme using a p-channel 2DHG HFET of this type will be most promising in future.
| 本文言語 | English |
|---|---|
| ホスト出版物のタイトル | Japanese Journal of Applied Physics, Part 2: Letters |
| ページ | 335-337 |
| ページ数 | 3 |
| 巻 | 24 |
| 版 | 5 |
| 出版ステータス | Published - 1985 5月 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 工学（全般）