A new 2-step metal-CMP technique has been developed for both of Al- and Cu-metallization, in which an as-deposited metal film is initially planarized by a hard-pad, and then is removed by a soft pad. The 2-step CMP improves no-failure-rate of the 1μm-pitch Al-interconnect to 90% in 6' wafer. Combining the CMP with Cu-CMP and a new organic film patterning method such as simultaneous resist-etch-back (SRECK), the Cu/benzocyclobuten (BCB) interconnects are successfully obtained.
|ジャーナル||Digest of Technical Papers - Symposium on VLSI Technology|
|出版ステータス||Published - 1996 1月 1|
|イベント||Proceedings of the 1996 Symposium on VLSI Technology - Honolulu, HI, USA|
継続期間: 1996 6月 11 → 1996 6月 13
ASJC Scopus subject areas