In this study, a micro in-plane p-type thermoelectric generator (TEG), which consists of thin-film Si1−x−yGexSny ternary alloy semiconductor on insulator, is developed to make efficient use of waste heat such as human body. A power factor value as high as 1095 μWm−1K−2 had been achieved using B-ion implanted and short-term rapid thermal annealing (RTA) process. In addition, a measuring scheme for micro TEG without external load resistance was designed. In one measuring session, multiple parameters can be measured. The micro single-arm TEG prepared by semiconductor process can output 0.29 nW power at a temperature difference of 15 K, and a cross-sectional power density has reached up to 0.58 mW/cm2, which is a superior value for wearable device. The findings of this study have important reference value for wearable device performance improvement and output power measuring of micro TEG.
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