Novel crystallization process for germanium thin films: Surfactant-crystallization method

Hiroyuki Miura, Masao Kamiko, Kentaro Kyuno

研究成果: Article

3 引用 (Scopus)

抜粋

A new process called the surfactant-crystallization method is used to fabricate crystalline Ge thin films. By depositing Ge on a heated substrate, on which a Au film is predeposited, the formation of crystal Ge is confirmed at a substrate temperature as low as 200 °C and at a heating duration of only 60 s.

元の言語English
記事番号010204
ジャーナルJapanese Journal of Applied Physics
52
発行部数1
DOI
出版物ステータスPublished - 2013 1 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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