抜粋
This paper describes a new GaAs static flip flop, called TD-FF (tri-state driver flip-flop), for ultra-low supply voltage GaAs heterojunction FET LSIs. The TD-FF operates at a data rate of 10 Gbps with 18 mW power consumption at 0.8 V supply voltage. The 10 Gbps power consumption is 1/5 of the minimum value reported for D-FFs so far. We also demonstrate a 1/8 static frequency divider IC using the TD-FF configuration. This IC operates up to 10 GHz with 38 mW at 0.8 V supply voltage.
| 元の言語 | English |
|---|---|
| ホスト出版物のタイトル | Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit) |
| 編集者 | Anon |
| 出版者 | Publ by IEEE |
| ページ | 75-78 |
| ページ数 | 4 |
| ISBN（印刷物） | 0780313933 |
| 出版物ステータス | Published - 1993 12 1 |
| イベント | Proceedings of the 15th Annual IEEE GaAs IC Symposium - San Jose, CA, USA 継続期間: 1993 10 10 → 1993 10 13 |
出版物シリーズ
| 名前 | Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit) |
|---|
Other
| Other | Proceedings of the 15th Annual IEEE GaAs IC Symposium |
|---|---|
| 市 | San Jose, CA, USA |
| 期間 | 93/10/10 → 93/10/13 |
フィンガープリント
ASJC Scopus subject areas
- Electrical and Electronic Engineering
これを引用
Maeda, T., Numata, K., Tokushima, M., Ishikawa, M., Fukaishi, M., Hida, H., & Ohno, Y. (1993). Novel high-speed low-power tri-state driver flip flop (TD-FF) for ultra-low supply voltage GaAs heterojunction FET LSIs. ： Anon (版), Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit) (pp. 75-78). (Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)). Publ by IEEE.