Novel high-speed low-power tri-state driver flip flop (TD-FF) for ultra-low supply voltage GaAs heterojunction FET LSIs

Tadashi Maeda, Keiichi Numata, Masatoshi Tokushima, Masaoki Ishikawa, Muneo Fukaishi, Hikaru Hida, Yasuo Ohno

研究成果: Conference contribution

10 引用 (Scopus)

抜粋

This paper describes a new GaAs static flip flop, called TD-FF (tri-state driver flip-flop), for ultra-low supply voltage GaAs heterojunction FET LSIs. The TD-FF operates at a data rate of 10 Gbps with 18 mW power consumption at 0.8 V supply voltage. The 10 Gbps power consumption is 1/5 of the minimum value reported for D-FFs so far. We also demonstrate a 1/8 static frequency divider IC using the TD-FF configuration. This IC operates up to 10 GHz with 38 mW at 0.8 V supply voltage.

元の言語English
ホスト出版物のタイトルTechnical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
編集者 Anon
出版者Publ by IEEE
ページ75-78
ページ数4
ISBN(印刷物)0780313933
出版物ステータスPublished - 1993 12 1
イベントProceedings of the 15th Annual IEEE GaAs IC Symposium - San Jose, CA, USA
継続期間: 1993 10 101993 10 13

出版物シリーズ

名前Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Other

OtherProceedings of the 15th Annual IEEE GaAs IC Symposium
San Jose, CA, USA
期間93/10/1093/10/13

    フィンガープリント

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

これを引用

Maeda, T., Numata, K., Tokushima, M., Ishikawa, M., Fukaishi, M., Hida, H., & Ohno, Y. (1993). Novel high-speed low-power tri-state driver flip flop (TD-FF) for ultra-low supply voltage GaAs heterojunction FET LSIs. : Anon (版), Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit) (pp. 75-78). (Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)). Publ by IEEE.