抄録
This paper describes a new GaAs static flip flop, called TD-FF (tri-state driver flip-flop), for ultra-low supply voltage GaAs heterojunction FET LSIs. The TD-FF operates at a data rate of 10 Gbps with 18 mW power consumption at 0.8 V supply voltage. The 10 Gbps power consumption is 1/5 of the minimum value reported for D-FFs so far. We also demonstrate a 1/8 static frequency divider IC using the TD-FF configuration. This IC operates up to 10 GHz with 38 mW at 0.8 V supply voltage.
| 元の言語 | English |
|---|---|
| ホスト出版物のタイトル | Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit) |
| 編集者 | Anon |
| 出版者 | Publ by IEEE |
| ページ | 75-78 |
| ページ数 | 4 |
| ISBN（印刷物） | 0780313933 |
| 出版物ステータス | Published - 1993 |
| 外部発表 | Yes |
| イベント | Proceedings of the 15th Annual IEEE GaAs IC Symposium - San Jose, CA, USA 継続期間: 1993 10 10 → 1993 10 13 |
Other
| Other | Proceedings of the 15th Annual IEEE GaAs IC Symposium |
|---|---|
| 市 | San Jose, CA, USA |
| 期間 | 93/10/10 → 93/10/13 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
これを引用
Novel high-speed low-power tri-state driver flip flop (TD-FF) for ultra-low supply voltage GaAs heterojunction FET LSIs. / Maeda, Tadashi; Numata, Keiichi; Tokushima, Masatoshi; Ishikawa, Masaoki; Fukaishi, Muneo; Hida, Hikaru; Ohno, Yasuo.
Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). 版 / Anon. Publ by IEEE, 1993. p. 75-78.研究成果: Conference contribution
}
TY - GEN
T1 - Novel high-speed low-power tri-state driver flip flop (TD-FF) for ultra-low supply voltage GaAs heterojunction FET LSIs
AU - Maeda, Tadashi
AU - Numata, Keiichi
AU - Tokushima, Masatoshi
AU - Ishikawa, Masaoki
AU - Fukaishi, Muneo
AU - Hida, Hikaru
AU - Ohno, Yasuo
PY - 1993
Y1 - 1993
N2 - This paper describes a new GaAs static flip flop, called TD-FF (tri-state driver flip-flop), for ultra-low supply voltage GaAs heterojunction FET LSIs. The TD-FF operates at a data rate of 10 Gbps with 18 mW power consumption at 0.8 V supply voltage. The 10 Gbps power consumption is 1/5 of the minimum value reported for D-FFs so far. We also demonstrate a 1/8 static frequency divider IC using the TD-FF configuration. This IC operates up to 10 GHz with 38 mW at 0.8 V supply voltage.
AB - This paper describes a new GaAs static flip flop, called TD-FF (tri-state driver flip-flop), for ultra-low supply voltage GaAs heterojunction FET LSIs. The TD-FF operates at a data rate of 10 Gbps with 18 mW power consumption at 0.8 V supply voltage. The 10 Gbps power consumption is 1/5 of the minimum value reported for D-FFs so far. We also demonstrate a 1/8 static frequency divider IC using the TD-FF configuration. This IC operates up to 10 GHz with 38 mW at 0.8 V supply voltage.
UR - http://www.scopus.com/inward/record.url?scp=0027802727&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0027802727&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0027802727
SN - 0780313933
SP - 75
EP - 78
BT - Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
A2 - Anon, null
PB - Publ by IEEE
ER -