TY - GEN
T1 - Novel high-speed low-power tri-state driver flip flop (TD-FF) for ultra-low supply voltage GaAs heterojunction FET LSIs
AU - Maeda, Tadashi
AU - Numata, Keiichi
AU - Tokushima, Masatoshi
AU - Ishikawa, Masaoki
AU - Fukaishi, Muneo
AU - Hida, Hikaru
AU - Ohno, Yasuo
PY - 1993/12/1
Y1 - 1993/12/1
N2 - This paper describes a new GaAs static flip flop, called TD-FF (tri-state driver flip-flop), for ultra-low supply voltage GaAs heterojunction FET LSIs. The TD-FF operates at a data rate of 10 Gbps with 18 mW power consumption at 0.8 V supply voltage. The 10 Gbps power consumption is 1/5 of the minimum value reported for D-FFs so far. We also demonstrate a 1/8 static frequency divider IC using the TD-FF configuration. This IC operates up to 10 GHz with 38 mW at 0.8 V supply voltage.
AB - This paper describes a new GaAs static flip flop, called TD-FF (tri-state driver flip-flop), for ultra-low supply voltage GaAs heterojunction FET LSIs. The TD-FF operates at a data rate of 10 Gbps with 18 mW power consumption at 0.8 V supply voltage. The 10 Gbps power consumption is 1/5 of the minimum value reported for D-FFs so far. We also demonstrate a 1/8 static frequency divider IC using the TD-FF configuration. This IC operates up to 10 GHz with 38 mW at 0.8 V supply voltage.
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M3 - Conference contribution
AN - SCOPUS:0027802727
SN - 0780313933
T3 - Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
SP - 75
EP - 78
BT - Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
A2 - Anon, null
PB - Publ by IEEE
T2 - Proceedings of the 15th Annual IEEE GaAs IC Symposium
Y2 - 10 October 1993 through 13 October 1993
ER -