Novel in-situ passivation of MoCl5 doped multilayer graphene with MoOx for low-resistance interconnects

K. Kawamoto; Y. Saito; M. Kenmoku; K. Ueno

doi:10.1109/EDTM.2017.7947586

Novel in-situ passivation of MoCl₅ doped multilayer graphene with MoO_x for low-resistance interconnects

K. Kawamoto, Y. Saito, M. Kenmoku, K. Ueno

研究成果

3 被引用数 (Scopus)

抄録

To improve the stability of multilayer graphene (MLG) doped with molybdenum pentachloride (MoCl₅) for low-resistance interconnects, we have newly developed an in-situ passivation process with molybdenum oxides. The improved air stability of dopants was confirmed with Raman spectroscopy by the direct MoO_x passivation at room temperature.

本文言語	English
ホスト出版物のタイトル	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings
出版社	Institute of Electrical and Electronics Engineers Inc.
ページ	252-254
ページ数	3
ISBN（電子版）	9781509046591
DOI	https://doi.org/10.1109/EDTM.2017.7947586
出版ステータス	Published - 2017 6月 13
イベント	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Toyama, Japan 継続期間: 2017 2月 28 → 2017 3月 2

出版物シリーズ

名前	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings

Other

Other	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017
国/地域	Japan
City	Toyama
Period	17/2/28 → 17/3/2

ASJC Scopus subject areas

ハードウェアとアーキテクチャ
電子工学および電気工学

文献へのアクセス

10.1109/EDTM.2017.7947586

他のファイルとリンク

引用スタイル

Kawamoto, K., Saito, Y., Kenmoku, M., & Ueno, K. (2017). Novel in-situ passivation of MoCl₅ doped multilayer graphene with MoO_x for low-resistance interconnects. In 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings (pp. 252-254). [7947586] (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2017.7947586

Novel in-situ passivation of MoCl₅ doped multilayer graphene with MoO_x for low-resistance interconnects. / Kawamoto, K.; Saito, Y.; Kenmoku, M. その他.

2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. p. 252-254 7947586 (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings).

研究成果

Kawamoto, K, Saito, Y, Kenmoku, M & Ueno, K 2017, Novel in-situ passivation of MoCl₅ doped multilayer graphene with MoO_x for low-resistance interconnects. in 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings., 7947586, 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 252-254, 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017, Toyama, Japan, 17/2/28. https://doi.org/10.1109/EDTM.2017.7947586

Kawamoto K, Saito Y, Kenmoku M, Ueno K. Novel in-situ passivation of MoCl₅ doped multilayer graphene with MoO_x for low-resistance interconnects. In 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2017. p. 252-254. 7947586. (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings). doi: 10.1109/EDTM.2017.7947586

Kawamoto, K. ; Saito, Y. ; Kenmoku, M. その他. / Novel in-situ passivation of MoCl₅ doped multilayer graphene with MoO_x for low-resistance interconnects. 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 252-254 (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings).

@inproceedings{c0098faf011f4a738494987c10f4d2c8,

title = "Novel in-situ passivation of MoCl5 doped multilayer graphene with MoOx for low-resistance interconnects",

abstract = "To improve the stability of multilayer graphene (MLG) doped with molybdenum pentachloride (MoCl5) for low-resistance interconnects, we have newly developed an in-situ passivation process with molybdenum oxides. The improved air stability of dopants was confirmed with Raman spectroscopy by the direct MoOx passivation at room temperature.",

keywords = "doping, graphene, interconnect",

author = "K. Kawamoto and Y. Saito and M. Kenmoku and K. Ueno",

note = "Funding Information: This work was partially supported by {"}Ultra-Low Voltage Device Project{"} funded and supported by METI and NEDO. This presentation is supported by the Research Center for Green Innovation of SIT. Publisher Copyright: {\textcopyright} 2017 IEEE. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.; 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 ; Conference date: 28-02-2017 Through 02-03-2017",

year = "2017",

month = jun,

day = "13",

doi = "10.1109/EDTM.2017.7947586",

language = "English",

series = "2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "252--254",

booktitle = "2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings",

}

TY - GEN

T1 - Novel in-situ passivation of MoCl5 doped multilayer graphene with MoOx for low-resistance interconnects

AU - Kawamoto, K.

AU - Saito, Y.

AU - Kenmoku, M.

AU - Ueno, K.

N1 - Funding Information: This work was partially supported by "Ultra-Low Voltage Device Project" funded and supported by METI and NEDO. This presentation is supported by the Research Center for Green Innovation of SIT. Publisher Copyright: © 2017 IEEE. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.

PY - 2017/6/13

Y1 - 2017/6/13

N2 - To improve the stability of multilayer graphene (MLG) doped with molybdenum pentachloride (MoCl5) for low-resistance interconnects, we have newly developed an in-situ passivation process with molybdenum oxides. The improved air stability of dopants was confirmed with Raman spectroscopy by the direct MoOx passivation at room temperature.

AB - To improve the stability of multilayer graphene (MLG) doped with molybdenum pentachloride (MoCl5) for low-resistance interconnects, we have newly developed an in-situ passivation process with molybdenum oxides. The improved air stability of dopants was confirmed with Raman spectroscopy by the direct MoOx passivation at room temperature.

KW - doping

KW - graphene

KW - interconnect

UR - http://www.scopus.com/inward/record.url?scp=85021962090&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85021962090&partnerID=8YFLogxK

U2 - 10.1109/EDTM.2017.7947586

DO - 10.1109/EDTM.2017.7947586

M3 - Conference contribution

AN - SCOPUS:85021962090

T3 - 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings

SP - 252

EP - 254

BT - 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017

Y2 - 28 February 2017 through 2 March 2017

ER -