Novel in-situ passivation of MoCl5 doped multilayer graphene with MoOx for low-resistance interconnects

K. Kawamoto, Y. Saito, M. Kenmoku, K. Ueno

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

To improve the stability of multilayer graphene (MLG) doped with molybdenum pentachloride (MoCl5) for low-resistance interconnects, we have newly developed an in-situ passivation process with molybdenum oxides. The improved air stability of dopants was confirmed with Raman spectroscopy by the direct MoOx passivation at room temperature.

本文言語English
ホスト出版物のタイトル2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings
出版社Institute of Electrical and Electronics Engineers Inc.
ページ252-254
ページ数3
ISBN(電子版)9781509046591
DOI
出版ステータスPublished - 2017 6 13
イベント2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Toyama, Japan
継続期間: 2017 2 282017 3 2

出版物シリーズ

名前2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings

Other

Other2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017
国/地域Japan
CityToyama
Period17/2/2817/3/2

ASJC Scopus subject areas

  • ハードウェアとアーキテクチャ
  • 電子工学および電気工学

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