A novel fabrication technology has been developed to implement three-dimensional MMICs. This technology enables us to form a three-dimensional structure of interconnections in a 10-μm-thick polyimide insulator matrix ; for example, four horizontal metal layers, pillar-like vertical vias, and wall-like vertical microwires for shielding as a ground plane. Many passive elements and circuits can be formed in a small area in multiple levels with vertical structures, not only on GaAs IC chips but also on Si IC chips. Si masterslice MMIC, which are a typical example of three-dimensional MMICs, can be fabricated using this technology.
|ジャーナル||NTT R and D|
|出版ステータス||Published - 1996 12月 1|
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