抄録
A novel fabrication technology has been developed to implement three-dimensional MMICs. This technology enables us to form a three-dimensional structure of interconnections in a 10-μm-thick polyimide insulator matrix ; for example, four horizontal metal layers, pillar-like vertical vias, and wall-like vertical microwires for shielding as a ground plane. Many passive elements and circuits can be formed in a small area in multiple levels with vertical structures, not only on GaAs IC chips but also on Si IC chips. Si masterslice MMIC, which are a typical example of three-dimensional MMICs, can be fabricated using this technology.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 1277-1283 |
| ページ数 | 7 |
| ジャーナル | NTT R and D |
| 巻 | 45 |
| 号 | 12 |
| 出版ステータス | Published - 1996 12 1 |
ASJC Scopus subject areas
- 電子工学および電気工学