@article{c615341d8b104b41886b61d0ac794536,
title = "Novel process for emitter-base-collector self-aligned hetero j unction bipolar transistor using a pattern-inversion method",
abstract = "A process for base-emitter-collector self-aligned HBTs using a pattern-inversion method is presented. A fabricated HBT has an emitter with a size of 1.5 x 10 μm2 realised by employing a dry-etching method. Typical current gain for the fabricated HBT is 26.",
keywords = "Bipolar transistors, Semiconductor devices and materials",
author = "S. Tanaka and M. Madihian and H. Toyoshima and N. Hayama and K. Honjo",
year = "1987",
month = jan,
day = "1",
doi = "10.1049/el:19870403",
language = "English",
volume = "23",
pages = "562--564",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "11",
}