NOVEL PROCESS FOR EMITTER-BASE-COLLECTOR SELF-ALIGNED HETEROJUNCTION BIPOLAR TRANSISTOR USING A PATTERN-INVERSION METHOD.

Shinichi Tanaka, M. Madihian, H. Toyoshima, N. Hayama, K. Honjo

研究成果: Article

5 引用 (Scopus)

抄録

A process for base-emitter-collector self-aligned HBTs using a pattern-inversion method is presented. A fabricated HBT has an emitter with a size of 1. 5 multiplied by 10 mu m**2 realized by employing a dry-etching method. Typical current gain for the fabricated HBT is 26.

元の言語English
ページ(範囲)562-564
ページ数3
ジャーナルElectronics Letters
23
発行部数11
出版物ステータスPublished - 1987 1 1
外部発表Yes

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Heterojunction bipolar transistors
Dry etching

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

これを引用

NOVEL PROCESS FOR EMITTER-BASE-COLLECTOR SELF-ALIGNED HETEROJUNCTION BIPOLAR TRANSISTOR USING A PATTERN-INVERSION METHOD. / Tanaka, Shinichi; Madihian, M.; Toyoshima, H.; Hayama, N.; Honjo, K.

:: Electronics Letters, 巻 23, 番号 11, 01.01.1987, p. 562-564.

研究成果: Article

Tanaka, Shinichi ; Madihian, M. ; Toyoshima, H. ; Hayama, N. ; Honjo, K. / NOVEL PROCESS FOR EMITTER-BASE-COLLECTOR SELF-ALIGNED HETEROJUNCTION BIPOLAR TRANSISTOR USING A PATTERN-INVERSION METHOD. :: Electronics Letters. 1987 ; 巻 23, 番号 11. pp. 562-564.
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