TY - JOUR
T1 - Novel quaternary AlInGaN/GaN heterostructure field effect transistors on sapphire substrate
AU - Liu, Yang
AU - Egawa, Takashi
AU - Jiang, Hao
AU - Zhang, Baijun
AU - Ishikawa, Hiroyasu
PY - 2006/7/7
Y1 - 2006/7/7
N2 - Undoped quaternary AlxIn0.02Ga0.98-xN/GaN heterostructure field effect transistors (HFET) with different Al mole fractions were fabricated on sapphire substrate. An enhancement in two-dimensional electron gas density with increasing the Al mole fractions was observed. The properties of HFETs revealed that, with the Al incorporation, both maximum transconductance (gmmax) and drain current (Idmax) increased up to 138 mS/mm and 1230 mA/mm, respectively, for the device with 2 μm gate length. In addition, the threshold voltage strongly depended on Al mole fraction, by which normally-off HFET was demonstrated on a low Al-contained sample. No breakdown was observed for all the AlxIn 0.02Ga0.98-xN/GaN HFETs when the gate-drain reverse bias was applied up to 100 V. The results indicate that quaternary AlInGaN is a promising candidate for high power and high frequency device applications.
AB - Undoped quaternary AlxIn0.02Ga0.98-xN/GaN heterostructure field effect transistors (HFET) with different Al mole fractions were fabricated on sapphire substrate. An enhancement in two-dimensional electron gas density with increasing the Al mole fractions was observed. The properties of HFETs revealed that, with the Al incorporation, both maximum transconductance (gmmax) and drain current (Idmax) increased up to 138 mS/mm and 1230 mA/mm, respectively, for the device with 2 μm gate length. In addition, the threshold voltage strongly depended on Al mole fraction, by which normally-off HFET was demonstrated on a low Al-contained sample. No breakdown was observed for all the AlxIn 0.02Ga0.98-xN/GaN HFETs when the gate-drain reverse bias was applied up to 100 V. The results indicate that quaternary AlInGaN is a promising candidate for high power and high frequency device applications.
KW - AllnGaN
KW - Breakdown voltage
KW - HFET
KW - Normally-off
KW - Piezoelectric polarization
KW - Quaternary
KW - Spontaneous polarization
KW - Two-dimensional electron gas
UR - http://www.scopus.com/inward/record.url?scp=33746840552&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33746840552&partnerID=8YFLogxK
U2 - 10.1143/JJAP.45.5728
DO - 10.1143/JJAP.45.5728
M3 - Article
AN - SCOPUS:33746840552
VL - 45
SP - 5728
EP - 5731
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 7
ER -