Numerical analysis of backside-electrode effects and field-plate effects on buffer-related current collapse in AlGaN/GaN HEMTs

K. Horio, H. Onodera

研究成果: Article

元の言語English
ページ（範囲）19-20
ジャーナルProceedings of 34th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2010), Darmstadt, Germany
出版物ステータスPublished - 2010 5 17

これを引用

Numerical analysis of backside-electrode effects and field-plate effects on buffer-related current collapse in AlGaN/GaN HEMTs. / Horio, K.; Onodera, H.

：: Proceedings of 34th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2010), Darmstadt, Germany, 17.05.2010, p. 19-20.

研究成果: Article

Horio, K & Onodera, H 2010, 'Numerical analysis of backside-electrode effects and field-plate effects on buffer-related current collapse in AlGaN/GaN HEMTs', Proceedings of 34th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2010), Darmstadt, Germany, pp. 19-20.
Horio K, Onodera H. Numerical analysis of backside-electrode effects and field-plate effects on buffer-related current collapse in AlGaN/GaN HEMTs. Proceedings of 34th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2010), Darmstadt, Germany. 2010 5 17;19-20.
Horio, K. ; Onodera, H. / Numerical analysis of backside-electrode effects and field-plate effects on buffer-related current collapse in AlGaN/GaN HEMTs. ：: Proceedings of 34th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2010), Darmstadt, Germany. 2010 ; pp. 19-20.
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