Numerical analysis of backside-electrode effects and field-plate effects on buffer-related current collapse in AlGaN/GaN HEMTs

K. Horio, H. Onodera

研究成果: Article › 査読

本文言語	English
ページ（範囲）	19-20
ジャーナル	Proceedings of 34th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2010), Darmstadt, Germany
出版ステータス	Published - 2010 5月 17

引用スタイル

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title = "Numerical analysis of backside-electrode effects and field-plate effects on buffer-related current collapse in AlGaN/GaN HEMTs",

author = "K. Horio and H. Onodera",

year = "2010",

month = may,

day = "17",

language = "English",

pages = "19--20",

journal = "Proceedings of 34th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2010), Darmstadt, Germany",

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AU - Horio, K.

AU - Onodera, H.

PY - 2010/5/17

Y1 - 2010/5/17

M3 - Article

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EP - 20

JO - Proceedings of 34th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2010), Darmstadt, Germany

JF - Proceedings of 34th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2010), Darmstadt, Germany

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