Numerical analysis of breakdown voltage enhancement in AlGaN/GaN HEMTs with a high-k passivation layer

Hideyuki Hanawa, Hiraku Onodera, Atsushi Nakajima, Kazushige Horio

研究成果: Article査読

55 被引用数 (Scopus)

抄録

2-D analysis of breakdown characteristics in AlGaN/GaN high electron mobility transistors (HEMTs) is performed by considering a deep donor and a deep acceptor in a buffer layer. The dependence of the OFF-state breakdown voltage on the relative permittivity of the passivation layer r and the thickness of the passivation layer d are studied. It is shown that as r increases, the OFF-state breakdown voltage increases. This is because the electric field at the drain edge of the gate is weakened as r increases. This occurs because in the insulator the applied voltage tends to drop uniformly in general, and hence when the insulator is attached to the semiconductor, the voltage drop along the semiconductor becomes smoother at the drain edge of the gate if the r of the insulator is higher. It is also shown that the OFF-state breakdown voltage increases as d increases because the electric field at the drain edge of the gate is weakened as d increases. It is concluded that AlGaN/GaN HEMTs with a high-k and thick passivation layer should have high breakdown voltages.

本文言語English
論文番号6712055
ページ(範囲)769-775
ページ数7
ジャーナルIEEE Transactions on Electron Devices
61
3
DOI
出版ステータスPublished - 2014 3

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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