Numerical analysis of impact ionization effects on turn-on characteristics in GaAs MESFETs

K. Horio, A. Wakabayashi, Y. Mitani

研究成果: Article

3 引用 (Scopus)
元の言語English
ページ(範囲)135-138
ジャーナルProceedings of 2001 European Gallium Arsenide and Other Semiconductor Application Symposium (GAAS 2001), London, England
出版物ステータスPublished - 2001 9 1

これを引用

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title = "Numerical analysis of impact ionization effects on turn-on characteristics in GaAs MESFETs",
author = "K. Horio and A. Wakabayashi and Y. Mitani",
year = "2001",
month = "9",
day = "1",
language = "English",
pages = "135--138",
journal = "Proceedings of 2001 European Gallium Arsenide and Other Semiconductor Application Symposium (GAAS 2001), London, England",

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TY - JOUR

T1 - Numerical analysis of impact ionization effects on turn-on characteristics in GaAs MESFETs

AU - Horio, K.

AU - Wakabayashi, A.

AU - Mitani, Y.

PY - 2001/9/1

Y1 - 2001/9/1

M3 - Article

SP - 135

EP - 138

JO - Proceedings of 2001 European Gallium Arsenide and Other Semiconductor Application Symposium (GAAS 2001), London, England

JF - Proceedings of 2001 European Gallium Arsenide and Other Semiconductor Application Symposium (GAAS 2001), London, England

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