Numerical analysis of pulsed I-V curves and current collapse in GaN FETs as affected by buffer trapping

H. Nakano, H. Takayanagi, K. Yonemoto, K. Horio

研究成果: Conference article査読

抄録

Two-dimensional transient analysis of GaN MESFETs is performed in which a three-level compensation model is adopted for a semi-insulating buffer layer, where a shallow donor, a deep donor and a deep acceptor are considered. Quasi-pulsed I-V curves are derived from the transient characteristics, and are compared with the steady-state I-V curves. It is shown that so-called current collapse or current reduction is more pronounced when the deep-acceptor density in the buffer layer is higher and when an off-state drain voltage is higher, because the trapping effects become more significant. It is suggested that to minimize current collapse in GaN-based FETs, an acceptor density in a semi-insulating GaN layer should be made low, although the current cutoff behaviour may be degraded.

本文言語English
論文番号H.2
ページ(範囲)141-144
ページ数4
ジャーナルTechnical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
DOI
出版ステータスPublished - 2005 12 1
イベント2005 IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC - Palm Springs, CA, United States
継続期間: 2005 10 302005 11 2

ASJC Scopus subject areas

  • 工学(全般)

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