Numerical analysis of slow current transients and power compression in GaAs FETs

Yusuke Kazami, Daisuke Kasai, Kazushige Horio

研究成果: Article

29 引用 (Scopus)

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Two-dimensional transient simulation of GaAs MESFETs is performed when the gate voltage and the drain voltage are both changed abruptly. Quasi-pulsed current-voltage (I-V) curves are derived from the transient characteristics. It is discussed how the slow current transients (lag phenomena) and the pulsed I-V curves are affected by the existence of substrate traps and surface states. It is shown that the so-called power compression could occur both due to substrate traps and due to surface states. Effects of impact ionization of carriers on these phenomena are also discussed. It is shown that the lag phenomena and the power compression are weakened when impact ionization of carriers becomes important, because generated holes may help the traps to change their ionized densities quickly.

元の言語English
ページ(範囲)1760-1764
ページ数5
ジャーナルIEEE Transactions on Electron Devices
51
発行部数11
DOI
出版物ステータスPublished - 2004 11 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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