抄録
The effects of substrate trap 'EL2' on the turn-on characteristics of GaAs MESFETs are studied through two-dimensional simulation. It is found that abnormal current overshoot and subsequent slow transients can be observed due to EL2 when the off-state gate voltage is strongly negative and electrons are also depleted in the substrate.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 343-344 |
| ページ数 | 2 |
| ジャーナル | Electronics Letters |
| 巻 | 35 |
| 号 | 4 |
| DOI | |
| 出版ステータス | Published - 1999 2月 18 |
ASJC Scopus subject areas
- 電子工学および電気工学