Numerical analysis of surface-state effects on kink phenomena of GaAs MESFETs

Kazushige Horio, Akira Wakabayashi

研究成果: Article査読

30 被引用数 (Scopus)

抄録

Effects of surface states on the "kink" (or an abnormal increase in output conductance with the drain voltage) in GaAs MESFETs are studied by two-dimensional (2-D) simulations. It is shown that the kink could arise due to a space-charge effect originated from impact ionization of holes and the following hole trapping by the surface states. The onset voltage for current rise depends on the nature of surface states, which strongly affects the potential profiles. Transient or dynamic simulation indicates that the trap-related kink phenomenon should be a rather slow process. Substrate-related kink dynamics are also analyzed.

本文言語English
ページ(範囲)2270-2276
ページ数7
ジャーナルIEEE Transactions on Electron Devices
47
12
DOI
出版ステータスPublished - 2000 12 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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