TY - GEN

T1 - Numerical modeling of energy transport effects in AlGaAs/GaAs heterojunction bipolar transistors.

AU - Horio, K.

AU - Yanai, H.

PY - 1987

Y1 - 1987

N2 - A novel numerical model for AlGaAs/GaAs heterojunction bipolar transistors (HBTs) is proposed in which the transport of electron energy is included using hydrodynamic equations derived from the Boltzmann equation. This model can analyze nonequilibrium transport effects such as velocity overshoot, which the conventional static model cannot handle. It is shown that the importance of energy transport effects arises from the fact that the average electron energy deviates largely from the field-determined one. The velocity overshoot can occur in a graded-gap base and a collector depletion region, resulting in a much higher cutoff frequency than that predicted by the conventional model.

AB - A novel numerical model for AlGaAs/GaAs heterojunction bipolar transistors (HBTs) is proposed in which the transport of electron energy is included using hydrodynamic equations derived from the Boltzmann equation. This model can analyze nonequilibrium transport effects such as velocity overshoot, which the conventional static model cannot handle. It is shown that the importance of energy transport effects arises from the fact that the average electron energy deviates largely from the field-determined one. The velocity overshoot can occur in a graded-gap base and a collector depletion region, resulting in a much higher cutoff frequency than that predicted by the conventional model.

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U2 - 10.1109/nascod.1987.721185

DO - 10.1109/nascod.1987.721185

M3 - Conference contribution

AN - SCOPUS:0023526650

SN - 0906783720

SN - 9780906783726

T3 - NASECODE V Proc Fifth Int Conf Numer Anal Semicond Devices Integr Circuit

SP - 231

EP - 236

BT - NASECODE V Proc Fifth Int Conf Numer Anal Semicond Devices Integr Circuit

PB - Publ by IEEE

T2 - NASECODE V: Proceedings of the Fifth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits

Y2 - 17 June 1987 through 19 June 1987

ER -