Numerical modeling of energy transport effects in AlGaAs/GaAs heterojunction bipolar transistors.

K. Horio, H. Yanai

研究成果: Conference contribution

4 被引用数 (Scopus)

抄録

A novel numerical model for AlGaAs/GaAs heterojunction bipolar transistors (HBTs) is proposed in which the transport of electron energy is included using hydrodynamic equations derived from the Boltzmann equation. This model can analyze nonequilibrium transport effects such as velocity overshoot, which the conventional static model cannot handle. It is shown that the importance of energy transport effects arises from the fact that the average electron energy deviates largely from the field-determined one. The velocity overshoot can occur in a graded-gap base and a collector depletion region, resulting in a much higher cutoff frequency than that predicted by the conventional model.

本文言語English
ホスト出版物のタイトルNASECODE V Proc Fifth Int Conf Numer Anal Semicond Devices Integr Circuit
出版社Publ by IEEE
ページ231-236
ページ数6
ISBN(印刷版)0906783720, 9780906783726
DOI
出版ステータスPublished - 1987
イベントNASECODE V: Proceedings of the Fifth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits - Dublin, Ireland
継続期間: 1987 6 171987 6 19

出版物シリーズ

名前NASECODE V Proc Fifth Int Conf Numer Anal Semicond Devices Integr Circuit

Other

OtherNASECODE V: Proceedings of the Fifth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits
CityDublin, Ireland
Period87/6/1787/6/19

ASJC Scopus subject areas

  • Engineering(all)

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