Numerical Modeling of Heterojunctions Including the Thermionic Emission Mechanism at the Heterojunction Interface

Kazushige Horio, Hisayoshi Yanai

研究成果: Article査読

133 被引用数 (Scopus)

抄録

A numerical model for heterojunctions is presented in which thermionic emission current is formulated at the heterojunction interface, in series with drift-diffusion current in the bulk. It is shown that the thermionic emission current at the heterojunction interface is regarded as a boundary condition to give a relation between quasi-Fermi levels at both sides of the interface. GaAs/AIGaAs heterojunctions are simulated as an example, and the results are compared with those obtained by a conventional diffusion model in which current transport across the heterojunction interface is not considered explicitly. It is shown that the thermionic emission mechanism at the interface is important and should be considered, particularly in isotype heterojunctions. According to the model presented here, more general numerical analyses including thermionic emission, drift, and diffusion phenomena can be achieved.

本文言語English
ページ(範囲)1093-1098
ページ数6
ジャーナルIEEE Transactions on Electron Devices
37
4
DOI
出版ステータスPublished - 1990 4

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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