Numerical modeling of heterojunctions including the thermionic emission mechanism at the heterojunction interface

Kazushige Horio, Hisayoshi Yanai

研究成果: Article

124 引用 (Scopus)

抄録

A numerical model for heterojunctions is discussed in which current transport across the heterojunction interface is taken into account by using thermionic emission current in series with drift-diffusion current in the bulk. The thermionic emission current is regarded as a boundary condition, which is used to obtain a relationship between quasi-Fermi-levels on both sides of the interface. GaAs/AlGaAs heterojunctions are simulated as an example, and the results are compared with those obtained by a conventional diffusion model in which current transport across the heterojunction interface is not considered explicitly. It is shown that the thermionic emission mechanism is important and should be considered, particularly in isotype heterojunctions. With the present model, more general numeral analyses that include thermionic emission, drift, and diffusion phenomena can be achieved.

元の言語English
ページ(範囲)1093-1098
ページ数6
ジャーナルIEEE Transactions on Electron Devices
37
発行部数4
DOI
出版物ステータスPublished - 1990 4

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Thermionic emission
Heterojunctions
Fermi level
Numerical models
Boundary conditions

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

これを引用

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