Numerical modeling of impact-ionization effects on gate-lag phenomena in GaAs MESFETs

A. Wakabayashi, Y. Mitani, D. Kasai, K. Horio

研究成果: Article › 査読

本文言語	English
ページ（範囲）	210-213
ジャーナル	Proceedings of 2001 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2001), Athens, Greece
出版ステータス	Published - 2001 9月 1

引用スタイル

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title = "Numerical modeling of impact-ionization effects on gate-lag phenomena in GaAs MESFETs",

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year = "2001",

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language = "English",

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journal = "Proceedings of 2001 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2001), Athens, Greece",

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AU - Wakabayashi, A.

AU - Mitani, Y.

AU - Kasai, D.

AU - Horio, K.

PY - 2001/9/1

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EP - 213

JO - Proceedings of 2001 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2001), Athens, Greece

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