Numerical modeling of reduction in surface-related lags and current slump in GaAs FETs

F. Hafiz, M. Kumeno, T. Tanaka, K. Horio

研究成果: Conference contribution

抜粋

We perform a two-dimensional transient analysis of field-plate GaAs MESFETs in which surface states are considered. Quasi-pulsed current-voltage curves are derived from the transient characteristics. It is shown that drain lag and current slump due to surface states are reduced by introducing a field plate because fixed potential at the field plate leads to reducing trapping effects by the surface states. Dependence of lag phenomena and current slump on field-plate length and SiO2 passivation layer thickness is also studied, indicating that the lags and current slump can be completely removed in some cases.

元の言語English
ホスト出版物のタイトル2013 IEEE International Conference of IEEE Region 10, IEEE TENCON 2013 - Conference Proceedings
DOI
出版物ステータスPublished - 2013 12 1
イベント2013 IEEE International Conference of IEEE Region 10, IEEE TENCON 2013 - Xi'an, Shaanxi, China
継続期間: 2013 10 222013 10 25

出版物シリーズ

名前IEEE Region 10 Annual International Conference, Proceedings/TENCON
ISSN(印刷物)2159-3442
ISSN(電子版)2159-3450

Conference

Conference2013 IEEE International Conference of IEEE Region 10, IEEE TENCON 2013
China
Xi'an, Shaanxi
期間13/10/2213/10/25

ASJC Scopus subject areas

  • Computer Science Applications
  • Electrical and Electronic Engineering

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  • これを引用

    Hafiz, F., Kumeno, M., Tanaka, T., & Horio, K. (2013). Numerical modeling of reduction in surface-related lags and current slump in GaAs FETs. : 2013 IEEE International Conference of IEEE Region 10, IEEE TENCON 2013 - Conference Proceedings [6718452] (IEEE Region 10 Annual International Conference, Proceedings/TENCON). https://doi.org/10.1109/TENCON.2013.6718452