抄録
Numerical simulations of AlGaAs/GaAs HBTs (heterojunction bipolar transistors) with various collector parameters are carried out to investigate the cutoff frequency characteristics, using the conventional static model and the energy transport model. It is shown that the transit time in the collector depletion layer is an intrinsically more important factor than the collector charging time. Therefore, a thinner n--layer with higher doping density is desirable to achieve higher cutoff frequency, fT It is found that the importance of energy transport effects arises from the fact that the actual electron energy deviates strongly from the field determined energy. The velocity overshoot can occur in a graded bandgap base and in the collector depletion layer, resulting in much higher fT than that predicted by the conventional model. A value of fT higher than 140 GHz is expected for an HBT with an n--layer thickness of 1000 angstrom.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 617-624 |
| ページ数 | 8 |
| ジャーナル | IEEE Transactions on Electron Devices |
| 巻 | 36 |
| 発行部数 | 4 pt 1 |
| DOI | |
| 出版物ステータス | Published - 1989 4 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Physics and Astronomy (miscellaneous)
これを引用
Numerical simulation of AlGaAs/GaAs heterojunction bipolar transistors with various collector parameters. / Horio, Kazushige; Iwatsu, Yasunori; Yanai, Hisayoshi.
：: IEEE Transactions on Electron Devices, 巻 36, 番号 4 pt 1, 04.1989, p. 617-624.研究成果: Article
}
TY - JOUR
T1 - Numerical simulation of AlGaAs/GaAs heterojunction bipolar transistors with various collector parameters.
AU - Horio, Kazushige
AU - Iwatsu, Yasunori
AU - Yanai, Hisayoshi
PY - 1989/4
Y1 - 1989/4
N2 - Numerical simulations of AlGaAs/GaAs HBTs (heterojunction bipolar transistors) with various collector parameters are carried out to investigate the cutoff frequency characteristics, using the conventional static model and the energy transport model. It is shown that the transit time in the collector depletion layer is an intrinsically more important factor than the collector charging time. Therefore, a thinner n--layer with higher doping density is desirable to achieve higher cutoff frequency, fT It is found that the importance of energy transport effects arises from the fact that the actual electron energy deviates strongly from the field determined energy. The velocity overshoot can occur in a graded bandgap base and in the collector depletion layer, resulting in much higher fT than that predicted by the conventional model. A value of fT higher than 140 GHz is expected for an HBT with an n--layer thickness of 1000 angstrom.
AB - Numerical simulations of AlGaAs/GaAs HBTs (heterojunction bipolar transistors) with various collector parameters are carried out to investigate the cutoff frequency characteristics, using the conventional static model and the energy transport model. It is shown that the transit time in the collector depletion layer is an intrinsically more important factor than the collector charging time. Therefore, a thinner n--layer with higher doping density is desirable to achieve higher cutoff frequency, fT It is found that the importance of energy transport effects arises from the fact that the actual electron energy deviates strongly from the field determined energy. The velocity overshoot can occur in a graded bandgap base and in the collector depletion layer, resulting in much higher fT than that predicted by the conventional model. A value of fT higher than 140 GHz is expected for an HBT with an n--layer thickness of 1000 angstrom.
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UR - http://www.scopus.com/inward/citedby.url?scp=0024646776&partnerID=8YFLogxK
U2 - 10.1109/16.22465
DO - 10.1109/16.22465
M3 - Article
AN - SCOPUS:0024646776
VL - 36
SP - 617
EP - 624
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 4 pt 1
ER -