Numerical simulation of drain-current transients and current compression in GaN MESFETs

H. Takayanagi, K. Itagaki, Kazushige Horio

研究成果: Conference contribution

抄録

Transient simulations of GaN MESFETs are performed in which a three-level, compensation model is adopted for a semi-insulating buffer layer, where a shallow donor, a deep donor and a deep acceptor are considered. Quasi-pulsed I-V curves are derived from the transient characteristics, and are compared with steady-state I-V curves. It is shown that so-called current compression is more pronounced when the deep-acceptor density in the buffer layer is higher and when an off-state drain voltage is higher, because trapping effects become more significant. It is suggested that to minimize current compression in GaN-based FETs, an acceptor density in a semi-insulating GaN layer should be made low.

元の言語English
ホスト出版物のタイトル2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings
ページ55-58
ページ数4
3
出版物ステータスPublished - 2006
イベント2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings - Boston, MA
継続期間: 2006 5 72006 5 11

Other

Other2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings
Boston, MA
期間06/5/706/5/11

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Drain current
Buffer layers
Computer simulation
Field effect transistors
Electric potential
Compensation and Redress

ASJC Scopus subject areas

  • Engineering(all)

これを引用

Takayanagi, H., Itagaki, K., & Horio, K. (2006). Numerical simulation of drain-current transients and current compression in GaN MESFETs. : 2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings (巻 3, pp. 55-58)

Numerical simulation of drain-current transients and current compression in GaN MESFETs. / Takayanagi, H.; Itagaki, K.; Horio, Kazushige.

2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings. 巻 3 2006. p. 55-58.

研究成果: Conference contribution

Takayanagi, H, Itagaki, K & Horio, K 2006, Numerical simulation of drain-current transients and current compression in GaN MESFETs. : 2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings. 巻. 3, pp. 55-58, 2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings, Boston, MA, 06/5/7.
Takayanagi H, Itagaki K, Horio K. Numerical simulation of drain-current transients and current compression in GaN MESFETs. : 2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings. 巻 3. 2006. p. 55-58
Takayanagi, H. ; Itagaki, K. ; Horio, Kazushige. / Numerical simulation of drain-current transients and current compression in GaN MESFETs. 2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings. 巻 3 2006. pp. 55-58
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