Numerical simulation of drain-current transients and current compression in GaN MESFETs

H. Takayanagi, K. Itagaki, K. Horio

研究成果: Paper

抜粋

Transient simulations of GaN MESFETs are performed in which a three-level, compensation model is adopted for a semi-insulating buffer layer, where a shallow donor, a deep donor and a deep acceptor are considered. Quasi-pulsed I-V curves are derived from the transient characteristics, and are compared with steady-state I-V curves. It is shown that so-called current compression is more pronounced when the deep-acceptor density in the buffer layer is higher and when an off-state drain voltage is higher, because trapping effects become more significant. It is suggested that to minimize current compression in GaN-based FETs, an acceptor density in a semi-insulating GaN layer should be made low.

元の言語English
ページ55-58
ページ数4
出版物ステータスPublished - 2006 12 8
イベント2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings - Boston, MA, United States
継続期間: 2006 5 72006 5 11

Conference

Conference2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings
United States
Boston, MA
期間06/5/706/5/11

    フィンガープリント

ASJC Scopus subject areas

  • Engineering(all)

これを引用

Takayanagi, H., Itagaki, K., & Horio, K. (2006). Numerical simulation of drain-current transients and current compression in GaN MESFETs. 55-58. 論文発表場所 2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings, Boston, MA, United States.