Numerical Simulation of GaAs MESFET's on the Semi-insulating Substrate Compensated by Deep Traps

Kazushige Horio, Hisayoshi Yanai, Toshiaki Ikoma

研究成果: Article

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Numerical simulations of GaAs MESFET's are performed in which impurity compensation by deep traps in the semi-insulating substrate is considered. It is found that the higher acceptor density in the substrate results in lower device current due to the formation of a space-charge layer at the channel-substrate interface. It is also found that the drain currents increase continuously with the drain voltage because electrons are injected to fill the traps in the substrate and a current path through the substrate is formed. This substrate current becomes remarkable for shorter gate-length MESFET's on a substrate with lower acceptor and trap densities. It is suggested that, to minimize short-channel effects in GaAs MESFET’s, the acceptor density as well as the trap density in the semi-insulating substrate must be high.

元の言語English
ページ(範囲)1778-1785
ページ数8
ジャーナルIEEE Transactions on Electron Devices
35
発行部数11
DOI
出版物ステータスPublished - 1988 11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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