Numerical simulation of GaAs MESFET's on the semi-insulating substrate compensated by deep traps

Kazushige Horio, Hisayoshi Yanai, Toshiaki Ikoma

研究成果: Article

57 引用 (Scopus)

抄録

It is found that higher acceptor density in the substrate results in lower device current due to the formation of a space-charge layer at the channel-substrate interface. The drain currents increase continuously with the drain voltage because electrons are injected to fill the traps in the substrate and a current path through the substrate is formed. This substrate current becomes significant for shorter gate-length MESFETs on a substrate with lower acceptor and trap densities. It is suggested that, to minimize short-channel effects in GaAs MESFETs, the acceptor density as well as the trap density in the semi-insulating substrate must be high.

元の言語English
ページ(範囲)1778-1785
ページ数8
ジャーナルIEEE Transactions on Electron Devices
35
発行部数11 pt 2
DOI
出版物ステータスPublished - 1988 11

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field effect transistors
traps
Computer simulation
Substrates
simulation
Drain current
gallium arsenide
Electric space charge
space charge
Electrons
Electric potential
electric potential
electrons

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

これを引用

Numerical simulation of GaAs MESFET's on the semi-insulating substrate compensated by deep traps. / Horio, Kazushige; Yanai, Hisayoshi; Ikoma, Toshiaki.

:: IEEE Transactions on Electron Devices, 巻 35, 番号 11 pt 2, 11.1988, p. 1778-1785.

研究成果: Article

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