Numerical simulation of trapping effects on drain-current transients of GaAs MESFETs

研究成果: Article

2 引用 (Scopus)

抄録

Drain-current transients of GaAs MESFETs are simulated in the range from 10-13 to 102s. The currents become constant temporarily at around 10-11 ('quasisteady state'), but decrease or increase after some periods, reaching real steady-state values. The slow transients are attributed to trapping and detrapping by deep levels.

元の言語English
ページ(範囲)295-296
ページ数2
ジャーナルElectronics Letters
28
発行部数3
出版物ステータスPublished - 1992 1 1

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Drain current
Computer simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

これを引用

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abstract = "Drain-current transients of GaAs MESFETs are simulated in the range from 10-13 to 102s. The currents become constant temporarily at around 10-11 ('quasisteady state'), but decrease or increase after some periods, reaching real steady-state values. The slow transients are attributed to trapping and detrapping by deep levels.",
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AB - Drain-current transients of GaAs MESFETs are simulated in the range from 10-13 to 102s. The currents become constant temporarily at around 10-11 ('quasisteady state'), but decrease or increase after some periods, reaching real steady-state values. The slow transients are attributed to trapping and detrapping by deep levels.

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