On-chip thermoelectric module comprised of oxide thin film legs

S. Saini, Paolo Mele, K. Miyazaki, A. Tiwari

研究成果: Article

12 引用 (Scopus)

抄録

On-chip thermoelectric thin film modules containing 5 legs of n-type (Al0.02Zn0.98O) and 5 legs of p-type (Ca3Co4O9) were fabricated on Al2O3, SrTiO3 single crystal, and fused silica substrates by pulsed laser deposition technique. Performance of modules was evaluated using ad hoc customized system where the module was set vertically for temperature gradient. The maximum output power (Pmax) was obtained on Al2O3 (0 0 0 1) single crystal substrate with temperature difference (ΔT)=230°C (Th = 300 °C): Pmax = 29.9 pW. The value of maximum output power increases with increase of temperature difference (ΔT). These results are encouraging for the practical applications of thermoelectric oxide thin films.

元の言語English
ページ(範囲)251-257
ページ数7
ジャーナルEnergy Conversion and Management
114
DOI
出版物ステータスPublished - 2016 4 15
外部発表Yes

Fingerprint

Oxide films
Single crystals
Thin films
Substrates
Fused silica
Pulsed laser deposition
Thermal gradients
Temperature

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Nuclear Energy and Engineering
  • Fuel Technology
  • Energy Engineering and Power Technology

これを引用

On-chip thermoelectric module comprised of oxide thin film legs. / Saini, S.; Mele, Paolo; Miyazaki, K.; Tiwari, A.

:: Energy Conversion and Management, 巻 114, 15.04.2016, p. 251-257.

研究成果: Article

Saini, S. ; Mele, Paolo ; Miyazaki, K. ; Tiwari, A. / On-chip thermoelectric module comprised of oxide thin film legs. :: Energy Conversion and Management. 2016 ; 巻 114. pp. 251-257.
@article{4c6ebae829b74ccba342b218a3974e65,
title = "On-chip thermoelectric module comprised of oxide thin film legs",
abstract = "On-chip thermoelectric thin film modules containing 5 legs of n-type (Al0.02Zn0.98O) and 5 legs of p-type (Ca3Co4O9) were fabricated on Al2O3, SrTiO3 single crystal, and fused silica substrates by pulsed laser deposition technique. Performance of modules was evaluated using ad hoc customized system where the module was set vertically for temperature gradient. The maximum output power (Pmax) was obtained on Al2O3 (0 0 0 1) single crystal substrate with temperature difference (ΔT)=230°C (Th = 300 °C): Pmax = 29.9 pW. The value of maximum output power increases with increase of temperature difference (ΔT). These results are encouraging for the practical applications of thermoelectric oxide thin films.",
keywords = "On-chip module, Oxide thin film, Pulsed laser deposition, Thermoelectric, Thermoelectric module",
author = "S. Saini and Paolo Mele and K. Miyazaki and A. Tiwari",
year = "2016",
month = "4",
day = "15",
doi = "10.1016/j.enconman.2016.02.001",
language = "English",
volume = "114",
pages = "251--257",
journal = "Energy Conversion and Management",
issn = "0196-8904",
publisher = "Elsevier Limited",

}

TY - JOUR

T1 - On-chip thermoelectric module comprised of oxide thin film legs

AU - Saini, S.

AU - Mele, Paolo

AU - Miyazaki, K.

AU - Tiwari, A.

PY - 2016/4/15

Y1 - 2016/4/15

N2 - On-chip thermoelectric thin film modules containing 5 legs of n-type (Al0.02Zn0.98O) and 5 legs of p-type (Ca3Co4O9) were fabricated on Al2O3, SrTiO3 single crystal, and fused silica substrates by pulsed laser deposition technique. Performance of modules was evaluated using ad hoc customized system where the module was set vertically for temperature gradient. The maximum output power (Pmax) was obtained on Al2O3 (0 0 0 1) single crystal substrate with temperature difference (ΔT)=230°C (Th = 300 °C): Pmax = 29.9 pW. The value of maximum output power increases with increase of temperature difference (ΔT). These results are encouraging for the practical applications of thermoelectric oxide thin films.

AB - On-chip thermoelectric thin film modules containing 5 legs of n-type (Al0.02Zn0.98O) and 5 legs of p-type (Ca3Co4O9) were fabricated on Al2O3, SrTiO3 single crystal, and fused silica substrates by pulsed laser deposition technique. Performance of modules was evaluated using ad hoc customized system where the module was set vertically for temperature gradient. The maximum output power (Pmax) was obtained on Al2O3 (0 0 0 1) single crystal substrate with temperature difference (ΔT)=230°C (Th = 300 °C): Pmax = 29.9 pW. The value of maximum output power increases with increase of temperature difference (ΔT). These results are encouraging for the practical applications of thermoelectric oxide thin films.

KW - On-chip module

KW - Oxide thin film

KW - Pulsed laser deposition

KW - Thermoelectric

KW - Thermoelectric module

UR - http://www.scopus.com/inward/record.url?scp=84958567855&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84958567855&partnerID=8YFLogxK

U2 - 10.1016/j.enconman.2016.02.001

DO - 10.1016/j.enconman.2016.02.001

M3 - Article

AN - SCOPUS:84958567855

VL - 114

SP - 251

EP - 257

JO - Energy Conversion and Management

JF - Energy Conversion and Management

SN - 0196-8904

ER -