On-chip thermoelectric module comprised of oxide thin film legs

S. Saini; P. Mele; K. Miyazaki; A. Tiwari

doi:10.1016/j.enconman.2016.02.001

On-chip thermoelectric module comprised of oxide thin film legs

S. Saini, P. Mele, K. Miyazaki, A. Tiwari

研究成果: Article

13 引用（Scopus）

抜粋

On-chip thermoelectric thin film modules containing 5 legs of n-type (Al_0.02Zn_0.98O) and 5 legs of p-type (Ca₃Co₄O₉) were fabricated on Al₂O₃, SrTiO₃ single crystal, and fused silica substrates by pulsed laser deposition technique. Performance of modules was evaluated using ad hoc customized system where the module was set vertically for temperature gradient. The maximum output power (P_max) was obtained on Al₂O₃ (0 0 0 1) single crystal substrate with temperature difference (ΔT)=230°C (T_h = 300 °C): P_max = 29.9 pW. The value of maximum output power increases with increase of temperature difference (ΔT). These results are encouraging for the practical applications of thermoelectric oxide thin films.

元の言語	English
ページ（範囲）	251-257
ページ数	7
ジャーナル	Energy Conversion and Management
巻	114
DOI	https://doi.org/10.1016/j.enconman.2016.02.001
出版物ステータス	Published - 2016 4 15
外部発表	Yes

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment
Nuclear Energy and Engineering
Fuel Technology
Energy Engineering and Power Technology

文献にアクセス

10.1016/j.enconman.2016.02.001

フィンガープリント On-chip thermoelectric module comprised of oxide thin film legs' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

これを引用

Saini, S., Mele, P., Miyazaki, K., & Tiwari, A. (2016). On-chip thermoelectric module comprised of oxide thin film legs. Energy Conversion and Management, 114, 251-257. https://doi.org/10.1016/j.enconman.2016.02.001

@article{4c6ebae829b74ccba342b218a3974e65,

title = "On-chip thermoelectric module comprised of oxide thin film legs",

abstract = "On-chip thermoelectric thin film modules containing 5 legs of n-type (Al0.02Zn0.98O) and 5 legs of p-type (Ca3Co4O9) were fabricated on Al2O3, SrTiO3 single crystal, and fused silica substrates by pulsed laser deposition technique. Performance of modules was evaluated using ad hoc customized system where the module was set vertically for temperature gradient. The maximum output power (Pmax) was obtained on Al2O3 (0 0 0 1) single crystal substrate with temperature difference (ΔT)=230°C (Th = 300 °C): Pmax = 29.9 pW. The value of maximum output power increases with increase of temperature difference (ΔT). These results are encouraging for the practical applications of thermoelectric oxide thin films.",

keywords = "On-chip module, Oxide thin film, Pulsed laser deposition, Thermoelectric, Thermoelectric module",

author = "S. Saini and P. Mele and K. Miyazaki and A. Tiwari",

year = "2016",

month = apr,

day = "15",

doi = "10.1016/j.enconman.2016.02.001",

language = "English",

volume = "114",

pages = "251--257",

journal = "Energy Conversion and Management",

issn = "0196-8904",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - On-chip thermoelectric module comprised of oxide thin film legs

AU - Saini, S.

AU - Mele, P.

AU - Miyazaki, K.

AU - Tiwari, A.

PY - 2016/4/15

Y1 - 2016/4/15

N2 - On-chip thermoelectric thin film modules containing 5 legs of n-type (Al0.02Zn0.98O) and 5 legs of p-type (Ca3Co4O9) were fabricated on Al2O3, SrTiO3 single crystal, and fused silica substrates by pulsed laser deposition technique. Performance of modules was evaluated using ad hoc customized system where the module was set vertically for temperature gradient. The maximum output power (Pmax) was obtained on Al2O3 (0 0 0 1) single crystal substrate with temperature difference (ΔT)=230°C (Th = 300 °C): Pmax = 29.9 pW. The value of maximum output power increases with increase of temperature difference (ΔT). These results are encouraging for the practical applications of thermoelectric oxide thin films.

AB - On-chip thermoelectric thin film modules containing 5 legs of n-type (Al0.02Zn0.98O) and 5 legs of p-type (Ca3Co4O9) were fabricated on Al2O3, SrTiO3 single crystal, and fused silica substrates by pulsed laser deposition technique. Performance of modules was evaluated using ad hoc customized system where the module was set vertically for temperature gradient. The maximum output power (Pmax) was obtained on Al2O3 (0 0 0 1) single crystal substrate with temperature difference (ΔT)=230°C (Th = 300 °C): Pmax = 29.9 pW. The value of maximum output power increases with increase of temperature difference (ΔT). These results are encouraging for the practical applications of thermoelectric oxide thin films.

KW - On-chip module

KW - Oxide thin film

KW - Pulsed laser deposition

KW - Thermoelectric

KW - Thermoelectric module

UR - http://www.scopus.com/inward/record.url?scp=84958567855&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84958567855&partnerID=8YFLogxK

U2 - 10.1016/j.enconman.2016.02.001

DO - 10.1016/j.enconman.2016.02.001

M3 - Article

AN - SCOPUS:84958567855

VL - 114

SP - 251

EP - 257

JO - Energy Conversion and Management

JF - Energy Conversion and Management

SN - 0196-8904

ER -