On the carrier mobility in forward-biased semiconductor barriers

Mark Lundstrom, Shin'Ichi Tanaka

研究成果: Article

11 引用 (Scopus)

抜粋

A simple one-speed solution to the Boltzmann equation is used to evaluate the mobility and diffusion coefficient for carriers in forward-biased semiconductor barriers. The analysis shows that although the average kinetic energy of carriers remains near thermal equilibrium, the mobility and diffusion coefficient are strongly reduced by the built-in field. Conventional macroscopic transport equations, which treat the carrier mobility and diffusion coefficient as single valued functions of the kinetic energy will improperly treat transport in forward-biased barriers. The results are important for the careful analysis of metal-semiconductor and heterojunction diodes.

元の言語English
ページ(範囲)962
ページ数1
ジャーナルApplied Physics Letters
DOI
出版物ステータスPublished - 1995

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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