On the carrier mobility in forward-biased semiconductor barriers

Mark Lundstrom, Shin'Ichi Tanaka

研究成果: Article査読

13 被引用数 (Scopus)

抄録

A simple one-speed solution to the Boltzmann equation is used to evaluate the mobility and diffusion coefficient for carriers in forward-biased semiconductor barriers. The analysis shows that although the average kinetic energy of carriers remains near thermal equilibrium, the mobility and diffusion coefficient are strongly reduced by the built-in field. Conventional macroscopic transport equations, which treat the carrier mobility and diffusion coefficient as single valued functions of the kinetic energy will improperly treat transport in forward-biased barriers. The results are important for the careful analysis of metal-semiconductor and heterojunction diodes.

本文言語English
ページ(範囲)962
ページ数1
ジャーナルApplied Physics Letters
DOI
出版ステータスPublished - 1995
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

フィンガープリント

「On the carrier mobility in forward-biased semiconductor barriers」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル