On the effects of gate-recess etching in current-collapse of different cap layers grown AlGaN/GaN high-electron-mobility transistors

Physics & Astronomy

• recesses 100%
• caps 79%
• high electron mobility transistors 77%
• etching 56%
• traps 20%
• damage 13%
• transconductance 10%
• leakage 7%
• trapping 7%
• current density 6%

Engineering & Materials Science

• High electron mobility transistors 86%
• Etching 80%
• Plasmas 25%
• Drain current 23%
• Transconductance 11%
• Doping (additives) 10%
• Leakage currents 10%
• Current density 9%
• Compensation and Redress 7%