TY - JOUR
T1 - Optical absorption and photoluminescence studies of n-type GaN
AU - Zhao, Guang Yuan
AU - Ishikawa, Hiroyasu
AU - Jiang, Hao
AU - Egawa, Takashi
AU - Jimbo, Takashi
AU - Umeno, Masayoshi
PY - 1999/9/15
Y1 - 1999/9/15
N2 - The Si-doping dependence of absorption coefficient and photoluminescence (PL) spectra of GaN grown by metalorganic chemical vapor deposition (MOCVD) was studied at room temperature. Band gap narrowing and band tailing effect were observed in the absorption spectra of GaN samples with high carrier concentration. A clear red shift and broadening of the PL emission peak were observed with increasing dopant concentration, which could also be attributed to the band tailing effect. This study shows that the band tailing effect plays an important role in determining the optical properties of Si-doped GaN.
AB - The Si-doping dependence of absorption coefficient and photoluminescence (PL) spectra of GaN grown by metalorganic chemical vapor deposition (MOCVD) was studied at room temperature. Band gap narrowing and band tailing effect were observed in the absorption spectra of GaN samples with high carrier concentration. A clear red shift and broadening of the PL emission peak were observed with increasing dopant concentration, which could also be attributed to the band tailing effect. This study shows that the band tailing effect plays an important role in determining the optical properties of Si-doped GaN.
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U2 - 10.1143/jjap.38.l993
DO - 10.1143/jjap.38.l993
M3 - Article
AN - SCOPUS:0033355689
SN - 0021-4922
VL - 38
SP - L993-L995
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 9 A/B
ER -