Optical absorption and photoluminescence studies of n-type GaN

Guang Yuan Zhao, Hiroyasu Ishikawa, Hao Jiang, Takashi Egawa, Takashi Jimbo, Masayoshi Umeno

研究成果: Article査読

33 被引用数 (Scopus)

抄録

The Si-doping dependence of absorption coefficient and photoluminescence (PL) spectra of GaN grown by metalorganic chemical vapor deposition (MOCVD) was studied at room temperature. Band gap narrowing and band tailing effect were observed in the absorption spectra of GaN samples with high carrier concentration. A clear red shift and broadening of the PL emission peak were observed with increasing dopant concentration, which could also be attributed to the band tailing effect. This study shows that the band tailing effect plays an important role in determining the optical properties of Si-doped GaN.

本文言語English
ページ(範囲)L993-L995
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
38
9 A/B
DOI
出版ステータスPublished - 1999 9月 15
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

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