Optical and Electrical Properties of InxGa1−xSe Mixed Crystal Grown from Indium Flux by Traveling Heater Method

Yohei Sato, Chao Tang, Katsuya Watanabe, Mayu Nakajima, Takuya Yamamoto, Nobuki Tezuka, Tadao Tanabe, Yutaka Oyama

研究成果: Article査読

抄録

InxGa1−xSe mixed crystals have been successfully grown from an indium flux by the traveling heater method at three growth temperatures. The thickness of the grown InxGa1−xSe mixed crystal perpendicular to (001) was more than 3 mm. The lattice constant, and optical and electrical properties of the InxGa1−xSe mixed crystals and undoped GaSe crystals were investigated and compared. The indium content of the InxGa1−xSe mixed crystals was observed to increase with decreasing growth temperature, while the lattice constant along the c-axis was observed to follow Vegard’s law. It was confirmed that a bandgap of In0.020Ga0.980Se is narrower than that of undoped GaSe according to the photoluminescence (PL) spectra. Compared with undoped GaSe crystal, the carrier concentration p was decreased by the incorporation of indium (In0.020Ga0.980Se, p = 6.4 × 1014 cm−3 at 257 K; In0.037Ga0.963Se, p = 2.6 × 1014 cm−3 at 257 K). In addition, it was suggested that the dominant carrier scattering mechanism of high-indium-content crystals at low temperature is ionized impurity scattering.

本文言語English
ページ(範囲)2649-2655
ページ数7
ジャーナルJournal of Electronic Materials
50
5
DOI
出版ステータスPublished - 2021 5

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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