Optical and Electrical Properties of InxGa1−xSe Mixed Crystal Grown from Indium Flux by Traveling Heater Method

Yohei Sato, Chao Tang, Katsuya Watanabe, Mayu Nakajima, Takuya Yamamoto, Nobuki Tezuka, Tadao Tanabe, Yutaka Oyama



InxGa1−xSe mixed crystals have been successfully grown from an indium flux by the traveling heater method at three growth temperatures. The thickness of the grown InxGa1−xSe mixed crystal perpendicular to (001) was more than 3 mm. The lattice constant, and optical and electrical properties of the InxGa1−xSe mixed crystals and undoped GaSe crystals were investigated and compared. The indium content of the InxGa1−xSe mixed crystals was observed to increase with decreasing growth temperature, while the lattice constant along the c-axis was observed to follow Vegard’s law. It was confirmed that a bandgap of In0.020Ga0.980Se is narrower than that of undoped GaSe according to the photoluminescence (PL) spectra. Compared with undoped GaSe crystal, the carrier concentration p was decreased by the incorporation of indium (In0.020Ga0.980Se, p = 6.4 × 1014 cm−3 at 257 K; In0.037Ga0.963Se, p = 2.6 × 1014 cm−3 at 257 K). In addition, it was suggested that the dominant carrier scattering mechanism of high-indium-content crystals at low temperature is ionized impurity scattering.

ジャーナルJournal of Electronic Materials
出版ステータスPublished - 2021 5

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学


「Optical and Electrical Properties of In<sub>x</sub>Ga<sub>1−x</sub>Se Mixed Crystal Grown from Indium Flux by Traveling Heater Method」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。