抄録
Optical characteristics of thin SiO2 films deposited from tetraethoxysilane by the plasma-enhanced chemical-vapor-deposition method were studied using synchrotron radiation. When the deposition temperature is 600°C, 7.6 eV absorption and 4.4 eV luminescence with a small decay constant (<3 ns) due to the oxygen vacancy (≡Si-Si≡) are observed. The decay curve of the 4.4 eV luminescence has the appearance of a stretched-exponential function. This indicates that the decay constant consists of widely distributed components, reflecting structural distortion of the film.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 5418-5422 |
| ページ数 | 5 |
| ジャーナル | Journal of Applied Physics |
| 巻 | 76 |
| 号 | 9 |
| DOI | |
| 出版ステータス | Published - 1994 12月 1 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学（全般）