抜粋
Optical characteristics of thin SiO2 films deposited from tetraethoxysilane by the plasma-enhanced chemical-vapor-deposition method were studied using synchrotron radiation. When the deposition temperature is 600°C, 7.6 eV absorption and 4.4 eV luminescence with a small decay constant (<3 ns) due to the oxygen vacancy (≡Si-Si≡) are observed. The decay curve of the 4.4 eV luminescence has the appearance of a stretched-exponential function. This indicates that the decay constant consists of widely distributed components, reflecting structural distortion of the film.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 5418-5422 |
| ページ数 | 5 |
| ジャーナル | Journal of Applied Physics |
| 巻 | 76 |
| 発行部数 | 9 |
| DOI | |
| 出版物ステータス | Published - 1994 12 1 |
フィンガープリント
ASJC Scopus subject areas
- Physics and Astronomy(all)
これを引用
Ishii, K., Ohki, Y., & Nishikawa, H. (1994). Optical characteristics of SiO2 formed by plasma-enhanced chemical-vapor deposition of tetraethoxysilane. Journal of Applied Physics, 76(9), 5418-5422. https://doi.org/10.1063/1.357196