Optical characteristics of SiO2 formed by plasma-enhanced chemical-vapor deposition of tetraethoxysilane

Keisuke Ishii, Yoshimichi Ohki, Hiroyuki Nishikawa

研究成果: Article査読

20 被引用数 (Scopus)

抄録

Optical characteristics of thin SiO2 films deposited from tetraethoxysilane by the plasma-enhanced chemical-vapor-deposition method were studied using synchrotron radiation. When the deposition temperature is 600°C, 7.6 eV absorption and 4.4 eV luminescence with a small decay constant (<3 ns) due to the oxygen vacancy (≡Si-Si≡) are observed. The decay curve of the 4.4 eV luminescence has the appearance of a stretched-exponential function. This indicates that the decay constant consists of widely distributed components, reflecting structural distortion of the film.

本文言語English
ページ(範囲)5418-5422
ページ数5
ジャーナルJournal of Applied Physics
76
9
DOI
出版ステータスPublished - 1994 12月 1
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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