Optical degradation of InGaN/AlGaN light-emitting diode on sapphire substrate grown by metalorganic chemical vapor deposition

T. Egawa, H. Ishikawa, T. Jimbo, M. Umeno

研究成果: Article査読

53 被引用数 (Scopus)

抄録

We report an optical degradation of an InGaN/AlGaN double-heterostructure light-emitting diode (LED) on a sapphire substrate grown by metalorgonic chemical vapor deposition. Electroluminescence, electron-beam induced current, and cathodoluminescence observations have shown that the degraded InGaN/AlGaN LED exhibits formation and propagation of dark spots and a crescent-shaped dark patch, which act as nonradiative recombination centers. The values of degradation rate under injected current density of 0.1 kA/cm2 were determined to be 1.1×10-3, 1.9×10-3 and 3.9×10-3h-1 at ambient temperatures of 30, 50, and 80°C, respectively. The activation energy of degradation was also determined to be 0.23 eV.

本文言語English
ページ(範囲)830-832
ページ数3
ジャーナルApplied Physics Letters
69
6
DOI
出版ステータスPublished - 1996 8 5
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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