TY - JOUR
T1 - Optically induced defects in vitreous silica
AU - Juodkazis, S.
AU - Watanabe, M.
AU - Sun, H. B.
AU - Matsuo, S.
AU - Nishii, J.
AU - Misawa, H.
N1 - Funding Information:
The present work was partly supported by a Grant-in-Aid for Scientific Research (A)(2) from the Ministry of Education, Science, Sports and Culture (09355008) and Satellite Venture Business Laboratory of the University of Tokushima. The authors thank Prof. H. Hosono for useful discussions.
PY - 2000/2/1
Y1 - 2000/2/1
N2 - We report the observation of photoluminescence (PL) in optically damaged vitreous silica (v-SiO2) and its gradual decrease by annealing at temperature range from room temperature to 773 K. Optical damage was induced by tightly focused picosecond or femtosecond irradiation inside v-SiO2. PL bands at 280, 470 and 650 nm were observed. The PL can be excited by 250 nm irradiation, which corresponds to the absorption band of the oxygen vacancy, VO. The decrease of PL with annealing is explained by structural modifications of the defects in the damaged area.
AB - We report the observation of photoluminescence (PL) in optically damaged vitreous silica (v-SiO2) and its gradual decrease by annealing at temperature range from room temperature to 773 K. Optical damage was induced by tightly focused picosecond or femtosecond irradiation inside v-SiO2. PL bands at 280, 470 and 650 nm were observed. The PL can be excited by 250 nm irradiation, which corresponds to the absorption band of the oxygen vacancy, VO. The decrease of PL with annealing is explained by structural modifications of the defects in the damaged area.
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U2 - 10.1016/S0169-4332(99)00430-4
DO - 10.1016/S0169-4332(99)00430-4
M3 - Conference article
AN - SCOPUS:0033889461
SN - 0169-4332
VL - 154
SP - 696
EP - 700
JO - Applied Surface Science
JF - Applied Surface Science
T2 - The Symposium A on Photo-Excited Processes, Diagnostics and Applications of the 1999 E-MRS Spring Conference (ICPEPA-3)
Y2 - 1 June 1999 through 4 June 1999
ER -