Optically induced defects in vitreous silica

S. Juodkazis, M. Watanabe, H. B. Sun, S. Matsuo, J. Nishii, H. Misawa

研究成果: Conference article

20 引用 (Scopus)

抜粋

We report the observation of photoluminescence (PL) in optically damaged vitreous silica (v-SiO2) and its gradual decrease by annealing at temperature range from room temperature to 773 K. Optical damage was induced by tightly focused picosecond or femtosecond irradiation inside v-SiO2. PL bands at 280, 470 and 650 nm were observed. The PL can be excited by 250 nm irradiation, which corresponds to the absorption band of the oxygen vacancy, VO. The decrease of PL with annealing is explained by structural modifications of the defects in the damaged area.

元の言語English
ページ(範囲)696-700
ページ数5
ジャーナルApplied Surface Science
154
DOI
出版物ステータスPublished - 2000 2 1
イベントThe Symposium A on Photo-Excited Processes, Diagnostics and Applications of the 1999 E-MRS Spring Conference (ICPEPA-3) - Strasbourg, France
継続期間: 1999 6 11999 6 4

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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  • これを引用

    Juodkazis, S., Watanabe, M., Sun, H. B., Matsuo, S., Nishii, J., & Misawa, H. (2000). Optically induced defects in vitreous silica. Applied Surface Science, 154, 696-700. https://doi.org/10.1016/S0169-4332(99)00430-4