The observation of quantum mechanical interference in the exciton photoluminescence excitation (PLE) process in a semiconductor quantum dot is reported. A simple PLE spectroscopy revealed in a single InGaAs quantum dot a dynamic and continuous evolution of a resonance profile from a peak into a dip and to near transparency caused by an increase of excitation power density of only a few 100 W/cm2. A one-photon process via exciton states and a two-photon process via biexciton states, both of which return to the radiative exciton state, interfere quantum mechanically, resulting in a progressive decrease in exciton absorption under increasing excitation.
|ジャーナル||Physica Status Solidi (A) Applied Research|
|出版ステータス||Published - 2000 3月 1|
|イベント||Optics of Excitons in Confined Systems (OECS-6) - Ascona, Switz|
継続期間: 1999 8月 30 → 1999 9月 2
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