P-channel aigaas/gaas heterostructure fets employing two-dimensional hole gas

Makoto Hirano, Kunishige Oe, Fumihiko Yanagawa

    研究成果: Article

    11 引用 (Scopus)

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    P-channel A1GaAs/GaAs heterostructure FETs O-HFETs) employing two-dimensional hole gas (2DHG) were fabricated and their characteristics were measured at 300 and 77 K. The achieved extrinsic transconductances were respectively 16 mS-mm-1and 46 mSmm-1with a gate length of 1 μm. Calculations indicate that transconductances of more than 100 mSmm-1at 300 K and more than 200 mSmm-1at 77 K should be achievable in p-HFET devices. The above results demonstrate the possibility of employing/?-HFETs for complementary logic, workable even at room temperature.

    元の言語English
    ページ(範囲)868-870
    ページ数3
    ジャーナルJapanese Journal of Applied Physics
    23
    発行部数11
    DOI
    出版物ステータスPublished - 1984 11

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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