P-channel aigaas/gaas heterostructure fets employing two-dimensional hole gas

Makoto Hirano, Kunishige Oe, Fumihiko Yanagawa

    研究成果査読

    11 被引用数 (Scopus)

    抄録

    P-channel A1GaAs/GaAs heterostructure FETs O-HFETs) employing two-dimensional hole gas (2DHG) were fabricated and their characteristics were measured at 300 and 77 K. The achieved extrinsic transconductances were respectively 16 mS-mm-1and 46 mSmm-1with a gate length of 1 μm. Calculations indicate that transconductances of more than 100 mSmm-1at 300 K and more than 200 mSmm-1at 77 K should be achievable in p-HFET devices. The above results demonstrate the possibility of employing/?-HFETs for complementary logic, workable even at room temperature.

    本文言語English
    ページ(範囲)868-870
    ページ数3
    ジャーナルJapanese Journal of Applied Physics
    23
    11
    DOI
    出版ステータスPublished - 1984 11

    ASJC Scopus subject areas

    • 工学(全般)
    • 物理学および天文学(全般)

    フィンガープリント

    「P-channel aigaas/gaas heterostructure fets employing two-dimensional hole gas」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

    引用スタイル