P-channel aigaas/gaas heterostructure fets employing two-dimensional hole gas

Makoto Hirano, Kunishige Oe, Fumihiko Yanagawa

研究成果: Article査読

11 被引用数 (Scopus)

抄録

P-channel A1GaAs/GaAs heterostructure FETs O-HFETs) employing two-dimensional hole gas (2DHG) were fabricated and their characteristics were measured at 300 and 77 K. The achieved extrinsic transconductances were respectively 16 mS-mm-1and 46 mSmm-1with a gate length of 1 μm. Calculations indicate that transconductances of more than 100 mSmm-1at 300 K and more than 200 mSmm-1at 77 K should be achievable in p-HFET devices. The above results demonstrate the possibility of employing/?-HFETs for complementary logic, workable even at room temperature.

本文言語English
ページ(範囲)868-870
ページ数3
ジャーナルJapanese Journal of Applied Physics
23
11
DOI
出版ステータスPublished - 1984 11月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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