Passivation of bulk and surface defects in GaAs grown on Si substrate by radio frequency phosphine/hydrogen plasma exposure

G. Wang, T. Ogawa, K. Murase, K. Hori, T. Soga, B. Zhang, G. Zhao, H. Ishikawa, T. Egawa, T. Jimbo, M. Umeno

研究成果: Article査読

3 被引用数 (Scopus)

抄録

The effects of PH3/H2 plasma exposure on GaAs grown on Si substrate (GaAs/Si) were investigated. It found that incorporation of P atoms in H2 plasma not only hydrogenated the defect-related recombination centers of GaAs/Si epilayer, but also phosphidized the surface region of GaAs/Si epilayer by forming a phosphidized layer. Electron beam-induced current measurement directly proved that the defect-related dark spot density was effectively reduced by adding P atoms into the pure H2 plasma. In addition, PH3/H2 plasma exposure greatly increased the minority carrier lifetime properties and decreased the saturation current of the GaAs p+-n junction structure grown on Si substrate.

本文言語English
ページ(範囲)4781-4784
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
40
8
DOI
出版ステータスPublished - 2001 8
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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