TY - JOUR
T1 - PbSnTe double-hetero junction laser diode and its application to mid-infrared spectroscopic imaging
AU - Oyama, Yutaka
AU - Tanabe, Tadao
AU - Kato, Yoshikazu
AU - Nishizawa, Jun Ichi
AU - Sasaki, Tetsuo
PY - 2008/4
Y1 - 2008/4
N2 - In-doped n-PbTe/p-PbSnTe/Tl-doped p-PbTe LPE layers were successively grown for the fabrication of mid-infrared (λ∼7.5 μm) laser diodes (LDs) by using the constant temperature liquid phase epitaxy on (1 0 0) oriented p-type PbTe substrates. Substrate materials were prepared by the stoichiometry-controlled Bridgman method. Whereas, the present double hetero LDs have a simple broad contact structure, the threshold current density for lasing is as low as ∼200 A cm2. The emitted wavelength is tunable by changing the operation temperature. PbSnTe DH-LD was applied for the mid-infrared spectrum measurements of glycine and the spatial distribution imaging was obtained by using the specific absorption line (fingerprints), which vibration mode is originated from the skeleton oscillation of molecules. Another demonstration for the application of PbSnTe DH-LD spectrometer is the imaging of carrier distribution on Si wafers based on the change of free carrier absorption coefficients.
AB - In-doped n-PbTe/p-PbSnTe/Tl-doped p-PbTe LPE layers were successively grown for the fabrication of mid-infrared (λ∼7.5 μm) laser diodes (LDs) by using the constant temperature liquid phase epitaxy on (1 0 0) oriented p-type PbTe substrates. Substrate materials were prepared by the stoichiometry-controlled Bridgman method. Whereas, the present double hetero LDs have a simple broad contact structure, the threshold current density for lasing is as low as ∼200 A cm2. The emitted wavelength is tunable by changing the operation temperature. PbSnTe DH-LD was applied for the mid-infrared spectrum measurements of glycine and the spatial distribution imaging was obtained by using the specific absorption line (fingerprints), which vibration mode is originated from the skeleton oscillation of molecules. Another demonstration for the application of PbSnTe DH-LD spectrometer is the imaging of carrier distribution on Si wafers based on the change of free carrier absorption coefficients.
KW - A1. Doping
KW - A3. Liquid phase epitaxy
KW - B2. Semiconducting lead compounds
KW - B3. Infrared devices
KW - B3. Laser diodes
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U2 - 10.1016/j.jcrysgro.2007.11.111
DO - 10.1016/j.jcrysgro.2007.11.111
M3 - Article
AN - SCOPUS:41449097959
VL - 310
SP - 1917
EP - 1922
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 7-9
ER -