Pd/GaN Schottky diode with a barrier height of 1.5 eV and a reasonably effective Richardson coefficient

Hiroyasu Ishikawa, Kouichi Nakamura, Takashi Egawa, Takashi Jimbo, Masayoshi Umeno

研究成果: Article査読

24 被引用数 (Scopus)

抄録

A Schottky diode of high quality Si-doped GaN grown on the c-face of a sapphire substrate by metalorganic chemical vapor deposition was investigated. Using conventional lift-off techniques, Ti/Al and Pd were evaporated as ohmic and Schottky contacts, respectively. The Pd/GaN Schottky diode showed excellent electronic properties. From the temperature dependence of current-voltage characteristics, a barrier height and a measured effective Richardson coefficient were obtained as 1.53 eV and 23.2 A · cm-2 · K-2, respectively. The barrier height was much higher than reported values and the measured Richardson coefficient was almost equal to the calculated theoretical value of 26 A · cm-2 · K-2.

本文言語English
ページ(範囲)L7-L9
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
37
1 PART A/B
DOI
出版ステータスPublished - 1998 1 15
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

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