Performance and degradation in single grain-size pentacene thin-film transistors

Taiki Komoda, Koji Kita, Kentaro Kyuno, Akira Toriumi

研究成果: Article査読

31 被引用数 (Scopus)

抄録

Submicron channel-length pentacene thin-film transisors (TFTs) were fabricated by electron beam lithography and a lift-off process. It was found that pentacene TFTs operated in the submicron channel length, but an enhancement of the off-stage leakage current and a large hysteresis were observed. By further investigation, we found that the large hysteresis observed in the submicron channel length was due to the moisture in the air. We also found a non-moisture-related degradation, in addition to a moisture-related one, by a time-dependent degradation measurement. It is of great importance both to avoid the moisture invasion and to reduce charging sites in the channel for reliable pentacene TFTs.

本文言語English
ページ(範囲)3662-3665
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
42
6 A
DOI
出版ステータスPublished - 2003 6月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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