Performance of a p-channel heterojunction fet with P⁺ -GaAs selectively grown contact layers for GaAs complementary ICs

Physics & Astronomy

• heterojunctions 67%
• field effect transistors 60%
• performance 33%
• leakage 31%
• MIS (semiconductors) 21%
• transconductance 21%
• barrier layers 20%
• electric potential 20%
• aluminum gallium arsenides 18%
• molecular beam epitaxy 16%
• cut-off 15%
• dissipation 15%
• oscillations 12%
• propagation 11%

Engineering & Materials Science

• Heterojunctions 100%
• Field effect transistors 81%
• Molecular beam epitaxy 29%
• Transconductance 22%
• Cutoff frequency 22%
• SPICE 20%
• Electric potential 19%
• Semiconductor materials 16%
• Energy dissipation 16%
• Metals 12%

Chemical Compounds

• Field Effect 76%
• Metalorganic Molecular Beam Epitaxy 38%
• Transconductance 29%
• Voltage 27%
• Resistance 24%
• Parasitic 23%
• Dissipation 20%