Photoluminescence and electron-spin-resonance studies of defects in amorphous SiO2 films

H. Nishikawa; H. Fukui; E. Watanabe; D. Ito; K. S. Seol; Y. Ohki

Photoluminescence and electron-spin-resonance studies of defects in amorphous SiO₂ films

H. Nishikawa, H. Fukui, E. Watanabe, D. Ito, K. S. Seol, Y. Ohki

研究成果: Paper › 査読

抄録

The point defects in a-SiO₂ films, including thermal a-SiO₂ and those prepared by plasma enhanced chemical vapor deposition (PECVD) and separation by implantation of oxygen (SIMOX) techniques, are characterized. The results of photoluminescence and electron spin resonance (ESR) in thermal a-SiO₂ films implanted with B⁺ or P⁺ ions are discussed. The photoluminescence decay characteristics were compared with those observed for other types of a-SiO₂ prepared by the PECVD and SIMOX techniques.

本文言語	English
ページ	59-62
ページ数	4
出版ステータス	Published - 1998 12 1
外部発表	はい
イベント	Proceedings of the 1998 International Symposium on Electrical Insulating Materials - Toyohashi, Jpn 継続期間: 1998 9 27 → 1998 9 30

Other

Other	Proceedings of the 1998 International Symposium on Electrical Insulating Materials
City	Toyohashi, Jpn
Period	98/9/27 → 98/9/30

ASJC Scopus subject areas

工学（全般）
材料科学（全般）

他のファイルとリンク

引用スタイル

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title = "Photoluminescence and electron-spin-resonance studies of defects in amorphous SiO2 films",

abstract = "The point defects in a-SiO2 films, including thermal a-SiO2 and those prepared by plasma enhanced chemical vapor deposition (PECVD) and separation by implantation of oxygen (SIMOX) techniques, are characterized. The results of photoluminescence and electron spin resonance (ESR) in thermal a-SiO2 films implanted with B+ or P+ ions are discussed. The photoluminescence decay characteristics were compared with those observed for other types of a-SiO2 prepared by the PECVD and SIMOX techniques.",

author = "H. Nishikawa and H. Fukui and E. Watanabe and D. Ito and Seol, {K. S.} and Y. Ohki",

year = "1998",

month = dec,

day = "1",

language = "English",

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note = "Proceedings of the 1998 International Symposium on Electrical Insulating Materials ; Conference date: 27-09-1998 Through 30-09-1998",

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T1 - Photoluminescence and electron-spin-resonance studies of defects in amorphous SiO2 films

AU - Nishikawa, H.

AU - Fukui, H.

AU - Watanabe, E.

AU - Ito, D.

AU - Seol, K. S.

AU - Ohki, Y.

PY - 1998/12/1

Y1 - 1998/12/1

N2 - The point defects in a-SiO2 films, including thermal a-SiO2 and those prepared by plasma enhanced chemical vapor deposition (PECVD) and separation by implantation of oxygen (SIMOX) techniques, are characterized. The results of photoluminescence and electron spin resonance (ESR) in thermal a-SiO2 films implanted with B+ or P+ ions are discussed. The photoluminescence decay characteristics were compared with those observed for other types of a-SiO2 prepared by the PECVD and SIMOX techniques.

AB - The point defects in a-SiO2 films, including thermal a-SiO2 and those prepared by plasma enhanced chemical vapor deposition (PECVD) and separation by implantation of oxygen (SIMOX) techniques, are characterized. The results of photoluminescence and electron spin resonance (ESR) in thermal a-SiO2 films implanted with B+ or P+ ions are discussed. The photoluminescence decay characteristics were compared with those observed for other types of a-SiO2 prepared by the PECVD and SIMOX techniques.

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T2 - Proceedings of the 1998 International Symposium on Electrical Insulating Materials

Y2 - 27 September 1998 through 30 September 1998

ER -