Photoluminescence and electron-spin-resonance studies of defects in amorphous SiO2 films

H. Nishikawa, H. Fukui, E. Watanabe, D. Ito, K. S. Seol, Y. Ohki

研究成果: Paper

抜粋

The point defects in a-SiO2 films, including thermal a-SiO2 and those prepared by plasma enhanced chemical vapor deposition (PECVD) and separation by implantation of oxygen (SIMOX) techniques, are characterized. The results of photoluminescence and electron spin resonance (ESR) in thermal a-SiO2 films implanted with B+ or P+ ions are discussed. The photoluminescence decay characteristics were compared with those observed for other types of a-SiO2 prepared by the PECVD and SIMOX techniques.

元の言語English
ページ59-62
ページ数4
出版物ステータスPublished - 1998 12 1
外部発表Yes
イベントProceedings of the 1998 International Symposium on Electrical Insulating Materials - Toyohashi, Jpn
継続期間: 1998 9 271998 9 30

Other

OtherProceedings of the 1998 International Symposium on Electrical Insulating Materials
Toyohashi, Jpn
期間98/9/2798/9/30

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)

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  • これを引用

    Nishikawa, H., Fukui, H., Watanabe, E., Ito, D., Seol, K. S., & Ohki, Y. (1998). Photoluminescence and electron-spin-resonance studies of defects in amorphous SiO2 films. 59-62. 論文発表場所 Proceedings of the 1998 International Symposium on Electrical Insulating Materials, Toyohashi, Jpn, .