抄録
The point defects in a-SiO2 films, including thermal a-SiO2 and those prepared by plasma enhanced chemical vapor deposition (PECVD) and separation by implantation of oxygen (SIMOX) techniques, are characterized. The results of photoluminescence and electron spin resonance (ESR) in thermal a-SiO2 films implanted with B+ or P+ ions are discussed. The photoluminescence decay characteristics were compared with those observed for other types of a-SiO2 prepared by the PECVD and SIMOX techniques.
本文言語 | English |
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ページ | 59-62 |
ページ数 | 4 |
出版ステータス | Published - 1998 12月 1 |
外部発表 | はい |
イベント | Proceedings of the 1998 International Symposium on Electrical Insulating Materials - Toyohashi, Jpn 継続期間: 1998 9月 27 → 1998 9月 30 |
Other
Other | Proceedings of the 1998 International Symposium on Electrical Insulating Materials |
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City | Toyohashi, Jpn |
Period | 98/9/27 → 98/9/30 |
ASJC Scopus subject areas
- 工学(全般)
- 材料科学(全般)