抜粋
The point defects in a-SiO2 films, including thermal a-SiO2 and those prepared by plasma enhanced chemical vapor deposition (PECVD) and separation by implantation of oxygen (SIMOX) techniques, are characterized. The results of photoluminescence and electron spin resonance (ESR) in thermal a-SiO2 films implanted with B+ or P+ ions are discussed. The photoluminescence decay characteristics were compared with those observed for other types of a-SiO2 prepared by the PECVD and SIMOX techniques.
| 元の言語 | English |
|---|---|
| ページ | 59-62 |
| ページ数 | 4 |
| 出版物ステータス | Published - 1998 12 1 |
| 外部発表 | Yes |
| イベント | Proceedings of the 1998 International Symposium on Electrical Insulating Materials - Toyohashi, Jpn 継続期間: 1998 9 27 → 1998 9 30 |
Other
| Other | Proceedings of the 1998 International Symposium on Electrical Insulating Materials |
|---|---|
| 市 | Toyohashi, Jpn |
| 期間 | 98/9/27 → 98/9/30 |
ASJC Scopus subject areas
- Engineering(all)
- Materials Science(all)
フィンガープリント Photoluminescence and electron-spin-resonance studies of defects in amorphous SiO<sub>2</sub> films' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。
これを引用
Nishikawa, H., Fukui, H., Watanabe, E., Ito, D., Seol, K. S., & Ohki, Y. (1998). Photoluminescence and electron-spin-resonance studies of defects in amorphous SiO2 films. 59-62. 論文発表場所 Proceedings of the 1998 International Symposium on Electrical Insulating Materials, Toyohashi, Jpn, .