Photoluminescence and electron-spin-resonance studies of defects in ion-implanted thermal SiO2 films

H. Nishikawa, H. Fukui, E. Watanabe, D. Ito, M. Takiyama, A. Ieki, Y. Ohki

研究成果: Conference article

1 被引用数 (Scopus)

抄録

Photoluminescence (PL) and electron-spin-resonance (ESR) studies were carried out on thermal SiO2 films after B+ or P+ implantation. Two PL bands at 4.3 eV and 2.6 eV were observed. For the 4.3-eV bands, two PL excitation bands were observed at 5.0 eV and 7.4 eV. Based on the comparison with those observed in oxygen-deficient-type bulk SiO2, the 4.3 eV and 2.6 eV PL bands are ascribed to oxygen vacancies induced by ion implantation. The decay of the 4.3-eV band in ion-implanted thermal SiO2 films follows a power low or stretched exponential, suggesting the distribution of PL lifetime. The ESR signal of the paramagnetic E′ centers in ion-implanted thermal SiO2 films were found to be broadened by dipole-dipole interactions between the closely spaced defects. The PL and ESR results suggest that the oxygen vacancies induced by ion implantation in thermal SiO2 films are perturbed by the local network structures.

本文言語English
ページ(範囲)97-102
ページ数6
ジャーナルMaterials Science Forum
196-201
pt 1
出版ステータスPublished - 1995 12 1
イベントProceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4) - Sendai, Jpn
継続期間: 1995 7 231995 7 28

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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