Photoluminescence and electron-spin-resonance studies of defects in amorphous SiO₂ films

Engineering & Materials Science

• Photoluminescence 100%
• Plasma enhanced chemical vapor deposition 87%
• Paramagnetic resonance 83%
• Oxygen 49%
• Point defects 47%
• Defects 42%
• Hot Temperature 29%
• Ions 28%

Chemical Compounds

• Plasma Enhanced Chemical Vapour Deposition 74%
• Photoluminescence 47%
• Amorphous Material 42%
• Crystal Point Defect 39%
• Dioxygen 30%
• Liquid Film 29%
• Ion 12%