Photoluminescence and Lasing Characteristics of GaInNAs/GaAsP Strain-Compensated Quantum Wells

Masao Kawaguchi, Tomoyuki Miyamoto, Atsushi Saitoh, Fumio Koyama

研究成果: Article

5 引用 (Scopus)

抜粋

We report on the photoluminescence (PL) and lasing characteristics of GaInNAs/GaAsP strain-compensated quantum wells (QWs) as a function of the amount of strain-compensation. The PL intensity of GaInNAs/GaAs(P) QWs was increased by increasing both the thickness and phosphorous (P) content of GaAsP strain-compensation layers. It was also shown that strain compensation is beneficial for increasing of the number of GaInNAs QWs. The threshold current densities of lasers were improved by introducing strain compensation.

元の言語English
ページ(範囲)L267-L270
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
43
発行部数2 B
DOI
出版物ステータスPublished - 2004 2 15
外部発表Yes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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