Defects in thermal oxides were investigated by a photoluminescence technique. Thermal oxides with a thickness of 100 nm grown either by dry or wet oxidation were studied. A broad PL band at 2-4 eV was observed for both dry and wet oxides. Effects of annealing under vacuum or in atmospheres of Ar or N2 on the PL were also examined. The PL intensity was enhanced for the case of wet oxide by vacuum annealing at 700 °C. High-temperature anneal above 750 °C without O2 further generated PL centers for both dry and wet oxides. The formation mechanism of the PL centers will be discussed in terms of the decomposition of oxide at Si/SiO2 interface.
|ジャーナル||Materials Research Society Symposium - Proceedings|
|出版ステータス||Published - 2000 12月 1|
|イベント||Structure and Electronic Properties of Ultrathin Dielectric Films on Silicon and Related Structures - Boston, MA, USA|
継続期間: 1999 11月 29 → 1999 12月 1
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