Defects in buried SiO2 films in Si formed by implantation of oxygen ions (SIMOX) were characterized by photoluminescence (PL) excited by KrF excimer laser (5.0 eV) and synchrotron radiation. Two PL bands were observed at 4.3 eV and 2.7 eV. The 4.3 eV band has two PL excitation bands at 5.0 eV and 7.4 eV, and its decay time is 4.0 ns for the 5.0 eV excitation and 2.4 ns for the 7.4 eV excitation. The decay time of the 2.7 eV PL band is found to be 9.7 ms. These results are very similar to those for the 4.3 eV and the 2.7 eV PL bands, which are observed in bulk silica glass of an oxygen-deficient type and attributed to the oxygen vacancy.
|ジャーナル||Materials Science Forum|
|出版ステータス||Published - 1995 12月 1|
|イベント||Proceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4) - Sendai, Jpn|
継続期間: 1995 7月 23 → 1995 7月 28
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