A photopatterning process for tantalum oxide films prepared by a sol-gel method was studied using a KrF excimer laser. A fine pattern photomask was attached to the tantalum oxide films which are irradiated with the KrF excimer laser and subsequently etched with hydrofluoric acid. Those area of the films irradiated with the laser were to etched leaving a line pattern of tantalum oxide film on the substrates. The state of the fine pattern depended on the intensity and pulse number of the laser. Fine patterns with a 10 μ m width were fabricated by laser irradiation of 75 mJ cm-2 intensity.
|ジャーナル||British Ceramic Transactions|
|出版ステータス||Published - 1993 1月 1|
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